Tap To Call

  Call Us +41 44 552 53 00

Moosstrasse 2a
8803 Rueschlikon, Switzerland

APD

InP based avalanche photodiodes (APD) are highly sensitive long-wavelengths photodiodes. APDs can be thought of as photodiodes that provide a built-in first stage of low noise gain through an internal current amplification mechanism called avalanche multiplication. Due to the low-noise gain, APDs offer superior receiver sensitivity compared to optical receivers based on pin photodiodes. Albis 2.5 Gb/s and 10 Gb/s APDs are based on state-of-the art technologies and are designed consequently for robust, high yield manufacturing, uniform device characteristics, reliability and ease of operation. Low temperature dependence of gain characteristics allow the use of the APD in unregulated receivers over a wide temperature range from -40°C to 85°C.

Like all our photodiodes, our APD chips can be customized. Whether you prefer top-illumination or bottom-illumination, wire-bonding or flip-chip soldering, array or single channel devices, our team is ready to tackle your requirements. Like to know more about customization, click here

Single channel APD photodiode chips

Product NameSpeedActive DiameterIlluminationDetails
APD32T-XS10 Gb/s32TopRead More
APD38L10 Gb/s38LensRead More
APD60T-XS2.5 Gb/s60TopRead More
APD85B-XS2.5 Gb/s85BottomRead More

Multiple channels APD photodiode chips

Product NameSpeedActive DiameterIlluminationDetails
APDCAxx-3210 Gb/s32TopRead More