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10 Gb/s APD with Integrated Lens

APD10D1 is a bottom illuminated, high speed avalanche photodiode (APD) chip with an integrated backside lens. A key strength of this innovative APD is its low excess noise, allowing receiver sensitivities of -34 dBm @ BER 5e-5 when used with an appropriate TIA. The integrated backside lens allows easy and efficient optical coupling.

The APD is optimized for single-mode 10GBASE-ER as well as 10G PON applications. It can be operated at a low bias voltage of typically 27 V and has an excellent gain-bandwidth product of 90 GHz.

The chip has a flexible contact pad layout allowing both wire-bonding or flip-chip mounting in different configurations.


  • Enables a receiver sensitivity of –34 dBm with commercially available TIAs
  • High gain-bandwidth product: 90 GHz
  • Large lens diameter of 100 μm
  • Low operating bias: 27 V
  • Low temperature dependence: 20 mV/°C
  • Flexible pad configuration with support pads for flip-chip bonding

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