How is the metallization of photodiode pads constructed ?
The pads on Albis photodiode chips are built from a stack of different metals. On the chip front-side we offer two different stacks. The first stack alternative is optimized for wire-bonding. It consists of an adhesion layer followed by 1.3 µm of pure gold. The second alternative is optimized for soldering. Again it consists of […]
Read MorePD20Kx
Scalable 4 x 25 Gb/s GaAs PD Array
Top-illuminated, scalable 4 x 25 Gb/s photodiode array. The arrays are optimized for short reach 850 nm VCSEL based parallel optical interconnects with a speed of up to 25 Gb/s per channel.
Read MorePD10Kx
Scalable 4 x 10 Gb/s GaAs PD Array
Top-illuminated, scalable 4 x 10 Gb/s photodiode array. The arrays are optimized for short reach 850 nm VCSEL based parallel optical interconnects with a speed of up to 10 Gb/s per channel.
Read MorePD05Kx
Scalable 4 x 5 Gb/s GaAs PD Array
Top-illuminated, scalable 4 x 5 Gb/s photodiode array. The arrays are optimized for short reach 850 nm VCSEL based parallel optical interconnects with a speed of up to 5 Gb/s per channel.
Read MorePD10Vx
Scalable 4 x 12 Gb/s Photodiode Array
Top illuminated, scalable 4 x 28 Gb/s photodiode array with separate anode and cathode pads for each channel.
Read MorePD10MA
12 x 12 Gb/s Photodiode Array
Top illuminated 12 x 12 Gb/s InGaAs photodiode array with tapered coplanar transmission lines.
Read MorePD20V4
Scalable 4 x 28 Gb/s Photodiode Array
Top illuminated, scalable 4 x 28 Gb/s photodiode array with separate anode and cathode pads for each channel.
Read MorePopular Search Terms
Need More Information?