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APD10E1
10 Gb/s Long-Wavelength APD

Top-illuminated, high speed avalanche photodiode chip with a dual pad layout and a large optical aperture. The APD is optimized for various single-mode 10G Gigabit Passive Optical Networks (GPON)  applications such as NGPON2. A key feature of this innovative APD is low excess noise, enabling receiver sensitivities of -29 dBm for 10 Gb/s NRZ signals when used with an appropriate TIA.

Features

  • Enables a receiver sensitivity¬†of ‚Äď29 dBm with commercially¬†available TIAs
  • High gain-bandwidth product: 90 GHz
  • Large optical aperture
  • Low operating bias: 29 V
  • Low temperature dependence:¬†25 mV/¬įC
  • Low capacitance: 140 fF

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