PD00L1 on wrap-around Carrier
Top Illuminated Large Area Monitor Photodiode
PD00L1 is a topside illuminated InGaAs/InP monitor photodiode chip featuring a large optical aperture with a diameter of 300 µm. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs. This monitor photodiode offers an excellent responsivity in the wavelength region […]
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4 x 56 Gbaud GaAs Photodiode Array
Ultra high-speed short-wavelength 4-channel GaAs photodiode array with ground-signal-ground (GSG) pad layout. The large optical apertures and the photodiode pitch of 250 µm are ideal for coupling to fiber ribbon cables. The topside illuminated p-i-n photodiode structures are optimized for 56 Gbaud telecom and 400GBASE-SR4 data center applications.
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56 Gbaud Photodiode
Ultra high-speed photodiode chip with a tapered coplanar transmission line. The topside illuminated p-i-n photodiode structure is optimized for 56 Gbaud PAM-4 (400GBASE-DR4 and 400G-FR4) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications.
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Large Area GaAs Photodiode
PD00S1 is a large area GaAs photodiode chip with 2 mm diameter detecting area. The topside illuminated p-i-n photodiode structure is optimized for monitoring applications. It offers an excellent responsivity in the wavelength region from 800 to 860 nm. Features Optimized for monitoring applications Large optical aperture of 2 mm High responsivity: 0.6 A/W @ […]
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Optical Receiver Module with Large Area GaAs Photodiode
PX00S1 is a large area GaAs PD00S1 photodiode chip packaged in an 8-pin TO-5 header and capped with a flat window TO-cap. The topside illuminated p-i-n photodiode structure is optimized for monitoring applications. It offers an excellent responsivity in the wavelength region from 800 to 860 nm.
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10 Gb/s Topside Illuminated APD
APD10G1 is a topside illuminated, high speed avalanche photodiode (APD) chip with a large dual pad layout allowing placement of multiple wire bonds on one pad.
Key strengths of this innovative APD are its low excess noise and its high optical damage threshold of up to +5 dBm.
APD20E1
28 Gbd Top-side Illuminated APD
Top-side illuminated, ultra high speed avalanche photodiode (APD) chip.
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Optical Detector with Four Quadrant Photodiode
PX00M3 is a four-quadrant PD00M4 photodiode packaged in a TO-5 header and capped with a lensed TO-cap.
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Large Area GaAs Photodiode
Large area GaAs photodiode chip optimized for monitoring applications
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Scalable n x 14 Gb/s GaAs Photodiode
Ultra small, short-wavelength GaAs photodiode array with optical apertures of 60 µm allowing easy coupling to multi-mode fibers. The scalable single photodiode chip is designed to form a multiple channel array with a pitch of 250 µm between the individual channels.
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14 Gb/s GaAs Photodiode
Ultra small 14 Gb/s GaAs photodiode chip featuring a large optical aperture allowing easy coupling to multi-mode fibers.
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56 Gbaud Photodiode with Enhanced Responsivity
Top illuminated photodiode chip with enhanced responsivity for single-mode data and telecom applications up to 56 Gbaud.
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56 Gbaud Photodiode with Enhanced Responsivity
Top illuminated photodiode chip with enhanced responsivity for single-mode data and telecom applications up to 56 Gbaud.
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Top Illuminated Large Area Monitor Photodiode
Top illuminated monitor photodiode chip featuring a very large optical aperture with a diameter of 300 µm.
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Top Illuminated Monitor Photodiode
Top illuminated InGaAs/InP monitor photodiode chip featuring a large optical aperture with a diameter of 150 µm.
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