PD00L1 on Small-Sized Carrier
Topside Illuminated Large Area Monitor Photodiode
PD00L1 is a topside illuminated InGaAs/InP monitor photodiode chip featuring a large optical aperture with a diameter of 300 µm. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs. This monitor photodiode offers an excellent responsivity in the wavelength region […]
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Topside Illuminated Large Area Monitor Photodiode
PD00V1 is a topside illuminated Very chip featuring a very large detecting area with 2 mm diameter. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs, sensing, LiDAR and instrumentation applications. This monitor photodiode offers an excellent responsivity in […]
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Topside Illuminated Large Area Monitor Photodiode
PD00W1 is a topside illuminated Very chip featuring a very large detecting area with 3 mm diameter.
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Four-Quadrant Position Sensing PD
PD00W4 is a photodiode segmented into four individual quadrants with a very large detecting area with 3 mm diameter.
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Four-Quadrant Position Sensing PD
PD00U4 is a photodiode segmented into four individual quadrants with a very large detecting area with 1 mm diameter.
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Optical Detector with Four-Quadrant Position Sensing PD
PX00U3 consists of a PD00U4 four-quadrant photodiode (quad photodiode) chip packaged in a TO-5 header and capped with a flat window TO-cap. The quad photodiode chip features a very large detecting area with a diameter of 1 mm. The photodiode is segmented into four individual quadrants with small separation of only 30 µm. The topside […]
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Topside Illuminated Large Area Monitor Photodiode
PD00U1 is a topside illuminated Very chip featuring a very large detecting area with 1 mm diameter.
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Topside Illuminated Large Area Monitor Photodiode
PD00T1 is a topside illuminated Very chip featuring a very large detecting area with 500 µm diameter.
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Optical Detector with Four-Quadrant Position Sensing APD
APX00M3 is a four-quadrant position sensing APD packaged in a TO-5 header and capped with flat window TO-cap.
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Four Quadrant Position Sensing Avalanche Photodiode
Four Quadrant Avalanche Photodiode (quad APD) ideally suited for position sensing and beam tracking applications.
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8 x 56 Gbaud Photodiode Array
PD40F8 is a very high-speed 8-channel InGaAs/InP photodiode array chip with a ground-signal-ground (G-S-G) pad layout and a photodiode channel pitch of 250 µm. The large topside illuminated p-i-n photodiode structures are optimized for 56 Gbaud PAM-4 (800GBASE-DR8) single-mode telecom, microwave photonic and RF over fiber links, as well as test and measurement applications. The compact photodiode […]
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10 Gb/s Topside Illuminated APD
APD10F1 is a topside illuminated, high speed avalanche photodiode (APD) chip with a large dual pad layout allowing placement of multiple wire bonds on one pad. Key strengths of this innovative APD are its low excess noise resulting in receiver sensitivities of -34.5 dBm @ BER 5e-5 with a simultaneous -31.0 dBm @ BER 1e-12 […]
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4 x 56 Gbaud GaAs Photodiode Array
Ultra high-speed short-wavelength 4-channel GaAs photodiode array with ground-signal-ground (GSG) pad layout. The large optical apertures and the photodiode pitch of 250 µm are ideal for coupling to fiber ribbon cables. The topside illuminated p-i-n photodiode structures are optimized for 56 Gbaud telecom and 400GBASE-SR4 data center applications.
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56 Gbaud Photodiode
Ultra high-speed photodiode chip with a tapered coplanar transmission line. The topside illuminated p-i-n photodiode structure is optimized for 56 Gbaud PAM-4 (400GBASE-DR4 and 400G-FR4) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications.
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Large Area GaAs Photodiode
PD00S1 is a large area GaAs photodiode chip with 2 mm diameter detecting area. The topside illuminated p-i-n photodiode structure is optimized for monitoring applications. It offers an excellent responsivity in the wavelength region from 800 to 860 nm. Features Optimized for monitoring applications Large optical aperture of 2 mm High responsivity: 0.6 A/W @ […]
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