PD05G1
High Quantum Efficiency Photodiode
PD05G1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 90 µm. The p-i-n photodiode structure is optimized for applications requiring high quantum efficiency, but is also suitable for datacom and telecom applications up to 2.5 Gb/s, as well as monitoring, instrumentation, sensing and LiDAR applications. The photodiode […]
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High Quantum Efficiency Photodiode
PD05S1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 120 µm. The p-i-n photodiode structure is optimized for datacom and telecom applications up to 2.5 Gb/s, as well as laser monitoring, sensing, LiDAR and quantum communication applications. The photodiode offers a very low dark current in […]
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Optical Receiver Module with High Quantum Efficiency Photodiode
PX05S3 is a PD05S1 photodiode chip packaged in a TO-5 header and capped with a flat window TO-cap. The photodiode offers a very low dark current in combination with an excellent responsivity in the wavelength region from 980 nm to 1620 nm.
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