PX05G3
Optical Receiver Module with High Quantum Efficiency Photodiode
PX05G3 is a PD05G1 photodiode chip packaged in a TO-46 header and capped with a flat window TO-cap. The photodiode offers a very low dark current in combination with an excellent responsivity in the wavelength region from 1260 nm to 1620 nm.
Read More28G ROSA Evaluation Board
REB20A1 is a high-speed evaluation board for the ease of evaluating Albis ROSA products up to 28 Gb/s. ROSAs can be soldered to the evaluation board through standard FPC footprint, or directly through TO pins. This evaluation board provides independent biasing path for APD/PD and TIA through separate SMA connectors. The differential RF output signal […]
Read MoreAPX20D2-T03
28G ROSA with Limiting TIA
APX20D2-T03 is a receiver optical subassembly (ROSA) based on an Albis 28 Gbaud APD chip featuring large dynamic range and a high optical damage threshold of up to +5 dBm, and a multi-rate 25G burst-mode TIA offering high sensitivity with fast settling time. Key strengths of this innovative APD ROSA are its exceptional sensitivity, high […]
Read MoreAPX20D2-T02
28G ROSA with Burst-mode TIA
APX20D2-T02 is a receiver optical subassembly (ROSA) based on an Albis 28 Gbaud APD chip featuring large dynamic range and a high optical damage threshold of up to +5 dBm, and a multi-rate 25G burst-mode TIA offering high sensitivity with fast settling time. Key strengths of this innovative APD ROSA are its exceptional sensitivity, high optical […]
Read MorePD05G1
High Quantum Efficiency Photodiode
PD05G1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 90 µm. The p-i-n photodiode structure is optimized for applications requiring high quantum efficiency, but is also suitable for datacom and telecom applications up to 2.5 Gb/s, as well as monitoring, instrumentation, sensing and LiDAR applications. The photodiode […]
Read MoreMulti-channel PD50X1 on Carrier
800G Photodiode Array with Integrated Lens
The PS50X4 photodiode array is an assembly of four PD50X1 photodiode chips flip-chip soldered onto a metallized ceramic carrier with coplanar G-S-G contact layout and a channel pitch of 500 µm. All photodiodes are positioned with high accuracy to guarantee a chip-to-chip alignment as low as ± 6 µm. PD50X1 is an ultra high-speed photodiode […]
Read MorePD50Y4
800G Photodiode Array with Integrated Lens
Ultra high-speed monolithic 4-channel InGaAs/InP photodiode array specifically designed for 112 Gbaud PAM-4 (400GbE and 800GbE) applications. This scalable array features integrated backside lenses and has a channel pitch of 500 µm. The 1×4 basic cell can be repeated n times to provide scalable arrays of 4, 8, 12 or more individual photodiode channels. It offers an excellent responsivity and […]
Read MorePD05S1
High Quantum Efficiency Photodiode
PD05S1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 120 µm. The p-i-n photodiode structure is optimized for datacom and telecom applications up to 2.5 Gb/s, as well as laser monitoring, sensing, LiDAR and quantum communication applications. The photodiode offers a very low dark current in […]
Read MorePD00L1 on Small-Sized Carrier
Topside Illuminated Large Area Monitor Photodiode
PD00L1 is a topside illuminated InGaAs/InP monitor photodiode chip featuring a large optical aperture with a diameter of 300 µm. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs. This monitor photodiode offers an excellent responsivity in the wavelength region […]
Read MorePD05J16 on wrap-around Carrier
16-Channel Balanced Photodiode Array
Compact 16-channel monolithic array InGaAs/InP photodiodes with large optical apertures of 120 µm separated by a 300 μm pitch. The backside illuminated photodiode array is flip-chip soldered on a ceramic submount with wrap-around metallization.
Read MorePMZ40A-L
40 GHz Single-mode Photodiode Module
The PMY40A module is a self-contained, ready-to-use, 40 GHz single-mode photodiode module for direct optical-to-electrical conversion of RF-modulated optical signal.
Read MorePD00V1
Topside Illuminated Large Area Monitor Photodiode
PD00V1 is a topside illuminated Very chip featuring a very large detecting area with 2 mm diameter. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs, sensing, LiDAR and instrumentation applications. This monitor photodiode offers an excellent responsivity in […]
Read MorePD00W1
Topside Illuminated Large Area Monitor Photodiode
PD00W1 is a topside illuminated Very chip featuring a very large detecting area with 3 mm diameter.
Read MorePD00W4
Four-Quadrant Position Sensing PD
PD00W4 is a photodiode segmented into four individual quadrants with a very large detecting area with 3 mm diameter.
Read MorePD00U4
Four-Quadrant Position Sensing PD
PD00U4 is a photodiode segmented into four individual quadrants with a very large detecting area with 1 mm diameter.
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