APD20B1/C1 on Carrier
25 Gb/s Avalanche Photodiode with Integrated Lens
Bottom-illuminated, 25 Gb/s avalanche photodiode (APD) chip with integrated backside lens mounted onto ceramic carrier. This innovative APD provides low noise multiplication and a high gain-bandwidth product which enables the design of high sensitivity 25G receivers. Typical applications include 28 Gbaud PAM-4, 100GBASE-ER4 and 25G EPON.
The integrated backside lens focuses the incoming light beam on the topside detecting area, enabling an easy and efficient optical coupling.
The APD is flip-chip bonded on a metallized ceramic submount with a T-shaped, coplanar GSG, or a Y-shaped contact layout. The large pads allow placement of multiple bonds.
Features
- Low noise multiplication
- High gain-bandwidth product
- Enabling high sensitivity 25G receivers
- Large lens diameter of 100 μm
- High responsivity: 0.8 A/W
- Flip-chip soldered onto ceramic carrier
- Customized versions available on request
Popular Search Terms
2.5 Gb/s Position Sensing High Quantum Efficiency 40 GHz 25 Gb/s 850 1310 112 Gbd 28 Gbd Top 2D Array Monitor PD 1 Gb/s PX Packaged PD Array Lens Chip on Carrier 56 Gbd PM Module single-mode 10 Gb/s 5 Gb/s 1550 20 GHz 14 Gb/s 30 GHz APD DC 128 Gbd Side Bottom High Power PD Single 12 Gb/s 10 GHz multi-mode Ultrafast InGaAs PD 28/56 Gbd DC 1.5 GHz
Need More Information?