PD70X1 on Carrier
128 Gbaud Photodiode with Integrated Lens
PD70X1 is an InGaAs/InP very high-speed photodiode chip flip-chip soldered on a metallized ceramic carrier with ground-signal-ground (GSG) contact layout. The photodiode is optimized for 128 Gbaud coherent telecom receivers (800G ZR/ZR+), microwave photonic links, RF over fiber as well as test and measurement applications.
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4x 28 Gbaud Photodiode Array with Integrated Lens on Carrier
PS20Y4-2C consists of a high-speed 4-channel InGaAs/InP photodiode array chip flip-chip mounted on a metallized ceramic carrier. Each individual channel features an integrated backside lens. The bottom illuminated p-i-n photodiode structure is optimized for data- and telecom applications up to 28 Gbaud. It offers an excellent responsivity and high speed of response in the wavelength region […]
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112 Gbaud Photodiode with Integrated Lens
PS50X1 is an assembly of a single 112 Gbaud photodiode chip flip-chip soldered onto a metallized ceramic carrier with coplanar contact layout. The bottom illuminated InGaAs p-i-n photodiode structure with an integrated backside lens is optimized for 112 Gbd PAM-4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF over fiber as well as test […]
Read MoreMulti-channel PD60X1 on Carrier
800G Photodiode Array with Integrated Lens
The PS60X4 photodiode array is an assembly of four PD60X1 photodiode chips flip-chip soldered onto a metallized ceramic carrier with coplanar G-S-G contact layout and a channel pitch of 750 µm.
Read MoreAPD10D1 on Carrier
10 Gb/s Avalanche Photodiode with Integrated Lens
APD10D1 is a bottom illuminated, high speed avalanche photodiode (APD) chip with an integrated backside lens. A key strength of this innovative APD is its low excess noise, allowing receiver sensitivities of -34 dBm @ BER 5e-5 when used with an appropriate TIA.
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4 x 56 Gbaud Photodiode Array with Integrated Lens
Ultra high-speed 4-channel InGaAs/InP photodiode array chip with a ground-signal-ground (G-S-G) pad layout and integrated backside lenses with a channel pitch of 500 µm. The bottom illuminated p-i-n photodiode structures are optimized for 56 Gbd PAM-4 (400GBASE-DR4 and 400G-FR4) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications. They offer an […]
Read MorePD60X1 on Carrier
112 Gbaud Photodiode with Integrated Lens
PS60X1 is an assembly of a single 112 Gbaud photodiode chip flip-chip soldered onto a metallized ceramic carrier with coplanar contact layout. The bottom illuminated InGaAs p-i-n photodiode structure with an integrated backside lens is optimized for 112 Gbd PAM-4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF over fiber as well as […]
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112 Gbaud Photodiode with Integrated Lens
Ultra high speed InGaAs/InP photodiode chip with an integrated backside lens. The bottom illuminated p-i-n photodiode structure with an integrated backside lens is optimized for 112 Gbd PAM-4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications. It offers an excellent responsivity and high speed of […]
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Linear Mode APD for Long-Wavelength LiDAR
Bottom illuminated, highly sensitive APD optimized for long wavelength, eye safe LiDAR applications. Thanks to the low device capacitance, the APD can be operated in pulsed time-of-flight (TOF) systems as well as offers the required bandwidth and linearity to pursue formats such as frequency modulated continuous wave (FMCW).
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10 Gb/s APD with Integrated Lens
Bottom-illuminated, high speed APD with an integrated backside lens. The APD is optimized for single-mode Gigabit Passive Optical Networks (GPON) and 10 Gb/s SONET/SDH telecom applications.
Read MoreAPD20D1 on Carrier
28G Avalanche Photodiode with Integrated Lens
APD20D1 is a bottom-illuminated, 28 Gb/s avalanche photodiode (APD) chip with integrated backside lens. This innovative APD provides low noise multiplication and a high gain-bandwidth product which enables the design of high sensitivity 28G receivers. Typical applications include 28 Gbaud PAM-4, 100GBASE-ER4 and 25G / 50G PON. The integrated backside lens focuses the incoming light beam […]
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56 Gbaud Photodiode with Integrated Lens
Ultra high speed InGaAs/InP photodiode chip with an integrated backside lens. The bottom illuminated p-i-n photodiode structure is optimized for 56 Gbaud PAM-4 (400GBASE-DR4 and 400G-FR4) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications. It offers an excellent responsivity and high speed of response in the wavelength region […]
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28G APD with Integrated Lens
Ultra high speed avalanche photodiode (APD) chip with an integrated backside lens.
Read MoreMulti-channel 56 Gbaud Photodiode on Carrier
400G Photodiode Array with Integrated Lens
Assembly of multiple 56 Gbaud photodiode chips flip-chip soldered onto a metallized ceramic carrier with coplanar G-S-G contact layout and a channel pitch of 750 µm. All photodiodes are positioned with high accuracy. The bottom illuminated InGaAs p-i-n photodiode structure with an integrated backside lens is optimized for up to 56 Gbd PAM-4 (400GBASE-DR4 and […]
Read MorePD40X1 on Carrier
56 Gbaud Photodiode with Integrated Lens
PS40X1 is an assembly of a single 56 Gbaud photodiode chip flip-chip soldered onto a metallized ceramic carrier with coplanar contact layout. The bottom illuminated InGaAs p-i-n photodiode structure with an integrated backside lens is optimized for 56 Gbd PAM-4 (400GBASE-DR4 and 400G-FR4) single-mode telecom, microwave photonic links, RF over fiber as well as test […]
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