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APD10D1 on Carrier
10 Gb/s Avalanche Photodiode with Integrated Lens

APD10D1 is a bottom illuminated, high speed avalanche photodiode (APD) chip with an integrated backside lens. A key strength of this innovative APD is its low excess noise, allowing receiver sensitivities of -34 dBm @ BER 5e-5 when used with an appropriate TIA.

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APD10G1
10 Gb/s Topside Illuminated APD

APD10G1 is a topside illuminated, high speed avalanche photodiode (APD) chip with a large dual pad layout allowing placement of multiple wire bonds on one pad.
Key strengths of this innovative APD are its low excess noise and its high optical damage threshold of up to +5 dBm.

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APD10D1
10 Gb/s APD with Integrated Lens

Bottom-illuminated, high speed APD with an integrated backside lens. The APD is optimized for single-mode Gigabit Passive Optical Networks (GPON) and 10 Gb/s SONET/SDH telecom applications.

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PD10I4
4 x 10 Gb/s Short- / Long-Wavelength Photodiode Array

Top illuminated 4 x 10 Gb/s InGaAs short- / long- wavelength photodiode array.

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PD10G1
10 Gb/s Short- / Long-Wavelength Photodiode

Top illuminated photodiode chip for single- and multi-mode fiber based data and telecom applications up to 12 Gb/s.

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PD10F1 on wrap-around Carrier
8 Gb/s Photodiode

10 Gb/s photodiode chip mounted onto a ceramic carrier with wrap-around metal pads for anode and cathode connections.

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PD10W1
10 Gb/s Photodiode

Top illuminated photodiode chip for single- or multi-mode fiber based data and telecom 10 Gb/s applications.

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PD10F1
10 Gb/s Photodiode

Top illuminated photodiode chip for single-mode data and telecom applications up to 12 Gb/s.

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APD10X1
10 Gb/s Long-Wavelength APD with Integrated Lens

Bottom-illuminated, low noise 10G avalanche photodiode chip with integrated backside lens enabling receiver sensitivities of -29 dBm.

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PD10X1
12 Gb/s Photodiode with Integrated Lens

Bottom-illuminated12 Gb/s photodiode chip with an integrated backside lens.

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APD10Vx
Scalable 4 x 10 Gb/s Long-Wavelength APD Array

Top illuminated, high-speed nx4 avalanche photodiode array with tapered transmission lines and optical apertures of 32 μm.

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APD10E1
10 Gb/s Long-Wavelength APD

Top-illuminated, low noise 10G avalanche photodiode chip enabling receiver sensitivities of -29 dBm.

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PD10Kx
Scalable 4 x 10 Gb/s GaAs PD Array

Top-illuminated, scalable 4 x 10 Gb/s photodiode array. The arrays are optimized for short reach 850 nm VCSEL based parallel optical interconnects with a speed of up to 10 Gb/s per channel.

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PD10E1
12 Gb/s Photodiode

Top illuminated photodiode chip for single-mode data and telecom applications up to 12.7 Gb/s.

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PD10B1
12 Gb/s Long Wavelength Photodiode

Top illuminated photodiode chip for single-mode data and telecom applications up to 12 Gb/s.

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