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PD05G1
High Quantum Efficiency Photodiode

PD05G1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 90 µm. The p-i-n photodiode structure is optimized for applications requiring high quantum efficiency, but is also suitable for datacom and telecom applications up to 2.5 Gb/s, as well as monitoring, instrumentation, sensing and LiDAR applications. The photodiode […]

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PD05S1
High Quantum Efficiency Photodiode

PD05S1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 120 µm. The p-i-n photodiode structure is optimized for datacom and telecom applications up to 2.5 Gb/s, as well as laser monitoring, sensing, LiDAR and quantum communication applications. The photodiode offers a very low dark current in […]

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PD05J16 on wrap-around Carrier
16-Channel Balanced Photodiode Array

Compact 16-channel monolithic array InGaAs/InP photodiodes with large optical apertures of 120 µm separated by a 300 μm pitch. The backside illuminated photodiode array is flip-chip soldered on a ceramic submount with wrap-around metallization.

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PX05S3
Optical Receiver Module with High Quantum Efficiency Photodiode

PX05S3 is a PD05S1 photodiode chip packaged in a TO-5 header and capped with a flat window TO-cap. The photodiode offers a very low dark current in combination with an excellent responsivity in the wavelength region from 980 nm to 1620 nm.

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PD00J1
Top Illuminated Monitor Photodiode

Top illuminated InGaAs/InP monitor photodiode chip featuring a large optical aperture with a diameter of 150 µm.

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PD00Jx
Multi-Channel Top Illuminated Monitor Photodiode Array

Top illuminated multi-channel 2.5 Gb/s photodiode array with large optical apertures of 150 µm. The photodiode pitch of 250 µm is suitable for coupling to fiber ribbon cables. The basic photodiode cell can be repeated n times to provide scalable arrays of multiple individual photodiode channels. The p-i-n photodiode structure is optimized for monitoring the […]

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PD05J8 on wrap-around Carrier
8-Channel Flip-chip Soldered Balanced Photodiode Array

Monolithic array of eight InGaAs/InP bottom illuminated photodiodes with large optical apertures of 120 µm separated by a 300 μm pitch. The bottom illuminated p-i-n photodiode structures are optimized for low speed monitoring applications in data- and telecom up to 2.5 Gb/s. They offer an excellent responsivity and high speed of response in the wavelength […]

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PD05J4 on wrap-around Carrier
4 Channel Flip-chip Soldered Monitoring Photodiode Array

Monolithic array of four bottom-illuminated photodiode chips with large optical apertures separated by a standard 250 μm pitch.

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PD05J4
Multi-Channel Bottom Illuminated Monitoring Photodiode Array

Bottom illuminated multi-channel 2.5 Gb/s InGaAs photodiode array.

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PD05J1
2.5 Gb/s Bottom Illuminated Photodiode

Bbottom illuminated photodiode chip for single-mode data and telecom applications up to 2.7 Gb/s.

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APD05Q1
2.5 Gb/s Long-Wavelength APD

Bottom-illuminated, low noise 2.5 Gb/s avalanche photodiode chip enabling receiver sensitivities of -35 dBm.

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APD05F1
2.5 Gb/s Long-Wavelength APD

Top-illuminated, low noise 2.5 Gb/s avalanche photodiode chip enabling receiver sensitivities of -35 dBm.

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