PD50Y1
200G Photodiode with Integrated Lens
Ultra high-speed InGaAs/InP photodiode chip specifically designed for 200G PAM-4 applications (800GbE, 1.6TbE and 3.2Tbe).
Read MorePX00W3
Optical Detector with 3mm Four-Quadrant Position Sensing PD
PX00W3 is a 3mm four-quadrant photodiode (quad photodiode) chip packaged in a TO-5 header and capped with a flat window TO-cap.
Read More4-Quadrant Photodiode Evaluation Board
Features Compatible with Albis 4-quadrant PD and APD Integrated low-noise, high-gain amplification Direct access to detector output signals Individual quadrants Differences and sums Ideal for test & measurement setups Need more information or request a quote
Read MoreAPD00A1 on Carrier
Linear Mode APD
APD00A1 is a backside illuminated, long-wavelength avalanche photodiode chip. Key strengths of this APD are a low excess noise and a high responsivity. The APD is optimized for sensing and LiDAR applications in the wavelength region from 990 up to 1650 nm. The large optical aperture of 180 µm allows easy and efficient optical coupling. The APD chip is […]
Read MorePX05G3
Optical Receiver Module with High Quantum Efficiency Photodiode
PX05G3 is a PD05G1 photodiode chip packaged in a TO-46 header and capped with a flat window TO-cap. The photodiode offers a very low dark current in combination with an excellent responsivity in the wavelength region from 1260 nm to 1620 nm.
Read More28G ROSA Evaluation Board
REB20A1 is a high-speed evaluation board for the ease of evaluating Albis ROSA products up to 28 Gb/s. ROSAs can be soldered to the evaluation board through standard FPC footprint, or directly through TO pins. This evaluation board provides independent biasing path for APD/PD and TIA through separate SMA connectors. The differential RF output signal […]
Read MoreAPX20D2-T03
28G ROSA with Limiting TIA
APX20D2-T03 is a receiver optical subassembly (ROSA) based on an Albis 28 Gbaud APD chip featuring large dynamic range and a high optical damage threshold of up to +5 dBm, and a multi-rate 25G burst-mode TIA offering high sensitivity with fast settling time. Key strengths of this innovative APD ROSA are its exceptional sensitivity, high […]
Read MoreAPX20D2-T02
28G ROSA with Burst-mode TIA
APX20D2-T02 is a receiver optical subassembly (ROSA) based on an Albis 28 Gbaud APD chip featuring large dynamic range and a high optical damage threshold of up to +5 dBm, and a multi-rate 25G burst-mode TIA offering high sensitivity with fast settling time. Key strengths of this innovative APD ROSA are its exceptional sensitivity, high optical […]
Read MorePD05G1
High Quantum Efficiency Photodiode
PD05G1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 90 µm. The p-i-n photodiode structure is optimized for applications requiring high quantum efficiency, but is also suitable for datacom and telecom applications up to 2.5 Gb/s, as well as monitoring, instrumentation, sensing and LiDAR applications. The photodiode […]
Read MoreMulti-channel PD50X1 on Carrier
800G Photodiode Array with Integrated Lens
The PS50X4 photodiode array is an assembly of four PD50X1 photodiode chips flip-chip soldered onto a metallized ceramic carrier with coplanar G-S-G contact layout and a channel pitch of 500 µm. All photodiodes are positioned with high accuracy to guarantee a chip-to-chip alignment as low as ± 6 µm. PD50X1 is an ultra high-speed photodiode […]
Read MorePD50Y4
800G Photodiode Array with Integrated Lens
Ultra high-speed monolithic 4-channel InGaAs/InP photodiode array specifically designed for 112 Gbaud PAM-4 (400GbE and 800GbE) applications. This scalable array features integrated backside lenses and has a channel pitch of 500 µm. The 1×4 basic cell can be repeated n times to provide scalable arrays of 4, 8, 12 or more individual photodiode channels. It offers an excellent responsivity and […]
Read MorePD05S1
High Quantum Efficiency Photodiode
PD05S1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 120 µm. The p-i-n photodiode structure is optimized for datacom and telecom applications up to 2.5 Gb/s, as well as laser monitoring, sensing, LiDAR and quantum communication applications. The photodiode offers a very low dark current in […]
Read MorePD00L1 on Small-Sized Carrier
Topside Illuminated Large Area Monitor Photodiode
PD00L1 is a topside illuminated InGaAs/InP monitor photodiode chip featuring a large optical aperture with a diameter of 300 µm. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs. This monitor photodiode offers an excellent responsivity in the wavelength region […]
Read MorePD05J16 on wrap-around Carrier
16-Channel Balanced Photodiode Array
Compact 16-channel monolithic array InGaAs/InP photodiodes with large optical apertures of 120 µm separated by a 300 μm pitch. The backside illuminated photodiode array is flip-chip soldered on a ceramic submount with wrap-around metallization.
Read MorePMZ40A-L
40 GHz Single-mode Photodiode Module
The PMY40A module is a self-contained, ready-to-use, 40 GHz single-mode photodiode module for direct optical-to-electrical conversion of RF-modulated optical signal.
Read MorePopular Search Terms
Need More Information?