PD00Q1
PD00Q1 is a side illuminated InGaAs/InP monitor photodiode chip that relies on 20 years of experience that Albis has obtained since bringing the first ever Side Illuminated Monitor Photodiode to a mass-market. The incoming laser light is refracted by the curved side facet onto the active area. Thanks to this unique side facet, a bulky […]
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4x 28 Gbaud Photodiode Array with Integrated Lens on Carrier
PS20Y4-2C consists of a high-speed 4-channel InGaAs/InP photodiode array chip flip-chip mounted on a metallized ceramic carrier. Each individual channel features an integrated backside lens. The bottom illuminated p-i-n photodiode structure is optimized for data- and telecom applications up to 28Â Gbaud. It offers an excellent responsivity and high speed of response in the wavelength region […]
Read MorePD50X1 on Carrier
112 Gbaud Photodiode with Integrated Lens
PS50X1 is an assembly of a single 112 Gbaud photodiode chip flip-chip soldered onto a metallized ceramic carrier with coplanar contact layout. The bottom illuminated InGaAs p-i-n photodiode structure with an integrated backside lens is optimized for 112 Gbd PAM-4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF over fiber as well as test […]
Read MorePD00L1 on wrap-around Carrier
Top Illuminated Large Area Monitor Photodiode
PD00L1 is a topside illuminated InGaAs/InP monitor photodiode chip featuring a large optical aperture with a diameter of 300 ”m. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs. This monitor photodiode offers an excellent responsivity in the wavelength region […]
Read MoreMulti-channel PD60X1 on Carrier
800G Photodiode Array with Integrated Lens
The PS60X4 photodiode array is an assembly of four PD60X1 photodiode chips flip-chip soldered onto a metallized ceramic carrier with coplanar G-S-G contact layout and a channel pitch of 750 ”m.
Read MoreAPD10D1 on Carrier
10 Gb/s Avalanche Photodiode with Integrated Lens
APD10D1 is a bottom illuminated, high speed avalanche photodiode (APD) chip with an integrated backside lens. A key strength of this innovative APD is its low excess noise, allowing receiver sensitivities of -34 dBm @ BER 5e-5 when used with an appropriate TIA.
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56 Gbaud Photodiode
Ultra high-speed photodiode chip with a tapered coplanar transmission line. The topside illuminated p-i-n photodiode structure is optimized for 56 Gbaud PAM-4 (400GBASE-DR4 and 400G-FR4) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications.
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Linear Mode APD
APD00A1 is a backside illuminated, long-wavelength avalanche photodiode chip with a large optical aperture of 180 ”m. Key strengths of this APD are a low excess noise and a high responsivity. The APD is optimized for sensing and LiDAR applications in the wavelength region from 990 up to 1650 nm. The APD chip has one anode […]
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4 x 56 Gbaud Photodiode Array with Integrated Lens
Ultra high-speed 4-channel InGaAs/InP photodiode array chip with a ground-signal-ground (G-S-G) pad layout and integrated backside lenses with a channel pitch of 500 ”m. The bottom illuminated p-i-n photodiode structures are optimized for 56 Gbd PAM-4 (400GBASE-DR4 and 400G-FR4) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications. They offer an […]
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28G Receiver Optical Subassembly
APX20D2 is a receiver optical subassembly (ROSA) based on Albis 28 Gbps APD20D1 APD chip. Key strengths of this innovative APD ROSA are its exceptional sensitivity and its high optical damage threshold of up to +5 dBm. The low excess noise allows receiver sensitivities of -27.4 dBm @ BER 5e-5 with a simultaneous -21.3 dBm @ BER 1e-12.
Read MorePQW10B-L
10 GHz High Power Photodiode Module
PQW10B-L is a high power microwave photodiode module designed for direct optical-to-electrical conversion of RF-modulated optical around 10 GHz.
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40 GHz Photodiode Module
Long-wavelength, high-speed microwave photodiode module designed for direct optical-to-electrical conversion of RF-modulated optical signals. The photodetector provides high responsivity of 0.8 A/W with a 3 dB bandwidth of 40 GHz and high linearity of up to 10 mA average photocurrent.
Read MoreAPD10G1
10 Gb/s Topside Illuminated APD
APD10G1 is a topside illuminated, high speed avalanche photodiode (APD) chip with a large dual pad layout allowing placement of multiple wire bonds on one pad.
Key strengths of this innovative APD are its low excess noise and its high optical damage threshold of up to +5 dBm.
PD60X1 on Carrier
112 Gbaud Photodiode with Integrated Lens
 PS60X1 is an assembly of a single 112 Gbaud photodiode chip flip-chip soldered onto a metallized ceramic carrier with coplanar contact layout. The bottom illuminated InGaAs p-i-n photodiode structure with an integrated backside lens is optimized for 112 Gbd PAM-4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF over fiber as well as […]
Read MorePD60X1
112 Gbaud Photodiode with Integrated Lens
Ultra high speed InGaAs/InP photodiode chip with an integrated backside lens. The bottom illuminated p-i-n photodiode structure with an integrated backside lens is optimized for 112 Gbd PAM-4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications. It offers an excellent responsivity and high speed of […]
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