Top-side illuminated, ultra high-speed avalanche photodiode (APD) chip. Key features of this innovative APD are a large dynamic range and a high optical damage threshold. The APD chip provides low noise multiplication and a high gain-bandwidth product which enables the design of high sensitivity 28G receivers. Record sensitivities of -25 dBm @ BER of 5E-5 have been demonstrated. Typical applications include 28 Gbaud PAM-4, 100GBASE-ER4 and 25G EPON.
The Y-shaped contact pad layout is optimized for wire-bonding. The small chip footprint saves valuable space in small packages such as TO-headers.
- Top-side illuminated 28 Gbd APD
- Large dynamic range
- Low noise multiplication
- Large gain-bandwidth product
- High responsivity: 0.8 A/W
- Low operating bias: 20 V
- Cost effective, small chip size