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25G / 50G PON APD

Topside illuminated, ultra high-speed avalanche photodiode (APD) chip. Key features of this innovative APD are a large dynamic range and a high optical damage threshold of up to +5 dBm. The APD chip provides low noise multiplication and a high gain-bandwidth product which enables the design of high sensitivity 28G receivers. Typical applications include 28 Gbaud PAM-4, 100GBASE-ER4 and 25G / 50G PON.
This product features a Y-shaped pad configuration that is optimized for wire-bonding. The small chip footprint saves valuable space in small packages such as TO-headers.


  • Topside illuminated 25G APD
  • Optimized for burst-mode operation
  • High optical damage threshold: up to +5 dBm
  • High responsivity: 4.5 A/W
  • Large dynamic range
  • Low noise multiplication
  • High gain-bandwidth product
  • Low operating bias: 20 V
  • Cost effective, small chip size

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