PD05G1
High Quantum Efficiency Photodiode
PD05G1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 90 µm. The p-i-n photodiode structure is optimized for applications requiring high quantum efficiency, but is also suitable for datacom and telecom applications up to 2.5 Gb/s, as well as monitoring, instrumentation, sensing and LiDAR applications. The photodiode […]
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High Quantum Efficiency Photodiode
PD05S1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 120 µm. The p-i-n photodiode structure is optimized for datacom and telecom applications up to 2.5 Gb/s, as well as laser monitoring, sensing, LiDAR and quantum communication applications. The photodiode offers a very low dark current in […]
Read MorePD05J16 on wrap-around Carrier
16-Channel Balanced Photodiode Array
Compact 16-channel monolithic array InGaAs/InP photodiodes with large optical apertures of 120 µm separated by a 300 μm pitch. The backside illuminated photodiode array is flip-chip soldered on a ceramic submount with wrap-around metallization.
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Optical Receiver Module with High Quantum Efficiency Photodiode
PX05S3 is a PD05S1 photodiode chip packaged in a TO-5 header and capped with a flat window TO-cap. The photodiode offers a very low dark current in combination with an excellent responsivity in the wavelength region from 980 nm to 1620 nm.
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Linear Mode APD
APD00A1 is a backside illuminated, long-wavelength avalanche photodiode chip with a large optical aperture of 180 µm. Key strengths of this APD are a low excess noise and a high responsivity. The APD is optimized for sensing and LiDAR applications in the wavelength region from 990 up to 1650 nm. The APD chip has one anode […]
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20 GHz High Power Photodiode on Carrier
High power, high linearity photodiode chip mounted on an AlN carrier. It offers a typical bandwidth of 22 GHz for photocurrents up to 50 mA, a responsivity of 0.5 A/W and high linearity of +30 dBm OIP3 @ 20 GHz, 30 mA.
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8-Channel Flip-chip Soldered Balanced Photodiode Array
Monolithic array of eight InGaAs/InP bottom illuminated photodiodes with large optical apertures of 120 µm separated by a 300 μm pitch. The bottom illuminated p-i-n photodiode structures are optimized for low speed monitoring applications in data- and telecom up to 2.5 Gb/s. They offer an excellent responsivity and high speed of response in the wavelength […]
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50G Bottom Illuminated Photodiode
Bottom illuminated photodiode chip for applications up to 50 GHz.
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4 Channel Flip-chip Soldered Monitoring Photodiode Array
Monolithic array of four bottom-illuminated photodiode chips with large optical apertures separated by a standard 250 μm pitch.
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5 Gb/s PON Photodiode with Integrated Optical Filter
Bottom illuminated 5 Gb/s InGaAs photodiode with integrated optical thin-film filter.
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Multi-Channel Bottom Illuminated Monitoring Photodiode Array
Bottom illuminated multi-channel 2.5 Gb/s InGaAs photodiode array.
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2.5 Gb/s Bottom Illuminated Photodiode
Bbottom illuminated photodiode chip for single-mode data and telecom applications up to 2.7 Gb/s.
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2.5 Gb/s Long-Wavelength APD
Bottom-illuminated, low noise 2.5 Gb/s avalanche photodiode chip enabling receiver sensitivities of -35 dBm.
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