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Moosstrasse 2a
8803 Rueschlikon, Switzerland

At Albis, we offer a large catalogue of InGaAs photodiodes for various applications from few Gb/s up to extremly high data rate of 100 Gb/s. All photodiodes offer an excellent trade-off between fast speed of response combined with a large active diameter and high responsivity in the wavelength region from 1260 to 1620 nm. For applications where optical alignment is particulary challenging, we offer bottom illuminated photodiodes with a backside integrated lens which strongly improves optical coupling tolerances. All our products feature optimized anti-reflection coatings for specific wavelengths or broadband applications. The pad metallization can be either optimized for wire-bonding or flip-chip mounting. The arrays feature a channel pitch with photolithographic precision which strongly simplifies optical alignment with fiber ribbons or photonic integrated circuits.

Our photodiodes can be customized. Whether you prefer top-illumination or bottom-illumination, wire-bonding or flip-chip soldering, array or single channel devices, our team is ready to tackle your requirements. Like to know more about customization, click here.

Single channel Ultrafast InGaAs p-i-n photodiode chips

PD60X1112 GbdLensRead More
PD40C156 GbdTopRead More
PD40D156 GbdTopRead More
PD40E156 GbdBottomRead More
PD40P156 GbdTopRead More
PD40X156 GbdLensRead More
PD40G128/56 GbdTopRead More
PD40H128/56 GbdTopRead More
PD40Y128/56 GbdLensRead More
PD20D128 GbdTopRead More
PD20X128 GbdLensRead More

Multiple channel Ultrafast InGaAs p-i-n photodiode chips

PD40Y428/56 Gbd4LensRead More
PD20E232 Gb/s2TopRead More
PD20Vx28 Gb/sn x 4TopRead More
PD20DA28 Gb/s12TopRead More
PD20W428 Gb/s4TopRead More
PD20G228 Gb/s2LensRead More