APD10F1
10 Gb/s Topside Illuminated APD
APD10F1 is a topside illuminated, high speed avalanche photodiode (APD) chip with a large dual pad layout allowing placement of multiple wire bonds on one pad. Key strengths of this innovative APD are its low excess noise resulting in receiver sensitivities of -34.5 dBm @ BER 5e-5 with a simultaneous -31.0 dBm @ BER 1e-12 […]
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PD00Q1 is a side illuminated InGaAs/InP monitor photodiode chip that relies on 20 years of experience that Albis has obtained since bringing the first ever Side Illuminated Monitor Photodiode to a mass-market. The incoming laser light is refracted by the curved side facet onto the active area. Thanks to this unique side facet, a bulky […]
Read MorePD50X1 on Carrier
112 Gbaud Photodiode with Integrated Lens
PS50X1 is an assembly of a single 112 Gbaud photodiode chip flip-chip soldered onto a metallized ceramic carrier with coplanar contact layout. The bottom illuminated InGaAs p-i-n photodiode structure with an integrated backside lens is optimized for 112 Gbd PAM-4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF over fiber as well as test […]
Read MorePD00L1 on wrap-around Carrier
Top Illuminated Large Area Monitor Photodiode
PD00L1 is a topside illuminated InGaAs/InP monitor photodiode chip featuring a large optical aperture with a diameter of 300 µm. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs. This monitor photodiode offers an excellent responsivity in the wavelength region […]
Read MoreAPD10D1 on Carrier
10 Gb/s Avalanche Photodiode with Integrated Lens
APD10D1 is a bottom illuminated, high speed avalanche photodiode (APD) chip with an integrated backside lens. A key strength of this innovative APD is its low excess noise, allowing receiver sensitivities of -34 dBm @ BER 5e-5 when used with an appropriate TIA.
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56 Gbaud Photodiode
Ultra high-speed photodiode chip with a tapered coplanar transmission line. The topside illuminated p-i-n photodiode structure is optimized for 56 Gbaud PAM-4 (400GBASE-DR4 and 400G-FR4) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications.
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Linear Mode APD
APD00A1 is a backside illuminated, long-wavelength avalanche photodiode chip with a large optical aperture of 180 µm. Key strengths of this APD are a low excess noise and a high responsivity. The APD is optimized for sensing and LiDAR applications in the wavelength region from 990 up to 1650 nm. The APD chip has one anode […]
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Large Area GaAs Photodiode
PD00S1 is a large area GaAs photodiode chip with 2 mm diameter detecting area. The topside illuminated p-i-n photodiode structure is optimized for monitoring applications. It offers an excellent responsivity in the wavelength region from 800 to 860 nm. Features Optimized for monitoring applications Large optical aperture of 2 mm High responsivity: 0.6 A/W @ […]
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10 Gb/s Topside Illuminated APD
APD10G1 is a topside illuminated, high speed avalanche photodiode (APD) chip with a large dual pad layout allowing placement of multiple wire bonds on one pad.
Key strengths of this innovative APD are its low excess noise and its high optical damage threshold of up to +5 dBm.
PD60X1 on Carrier
112 Gbaud Photodiode with Integrated Lens
PS60X1 is an assembly of a single 112 Gbaud photodiode chip flip-chip soldered onto a metallized ceramic carrier with coplanar contact layout. The bottom illuminated InGaAs p-i-n photodiode structure with an integrated backside lens is optimized for 112 Gbd PAM-4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF over fiber as well as […]
Read MorePD60X1
112 Gbaud Photodiode with Integrated Lens
Ultra high speed InGaAs/InP photodiode chip with an integrated backside lens. The bottom illuminated p-i-n photodiode structure with an integrated backside lens is optimized for 112 Gbd PAM-4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications. It offers an excellent responsivity and high speed of […]
Read MoreAPD20E1
28 Gbd Top-side Illuminated APD
Top-side illuminated, ultra high speed avalanche photodiode (APD) chip.
Read MorePD00K1
Large Area GaAs Photodiode
Large area GaAs photodiode chip optimized for monitoring applications
Read MorePD10Y1
14 Gb/s GaAs Photodiode
Ultra small 14 Gb/s GaAs photodiode chip featuring a large optical aperture allowing easy coupling to multi-mode fibers.
Read MoreAPD05C1
Linear Mode APD for Long-Wavelength LiDAR
Bottom illuminated, highly sensitive APD optimized for long wavelength, eye safe LiDAR applications. Thanks to the low device capacitance, the APD can be operated in pulsed time-of-flight (TOF) systems as well as offers the required bandwidth and linearity to pursue formats such as frequency modulated continuous wave (FMCW).
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