PD00V1
Topside Illuminated Large Area Monitor Photodiode
PD00V1 is a topside illuminated Very chip featuring a very large detecting area with 2 mm diameter. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs, sensing, LiDAR and instrumentation applications. This monitor photodiode offers an excellent responsivity in […]
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Topside Illuminated Large Area Monitor Photodiode
PD00W1 is a topside illuminated Very chip featuring a very large detecting area with 3 mm diameter.
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Topside Illuminated Large Area Monitor Photodiode
PD00U1 is a topside illuminated Very chip featuring a very large detecting area with 1 mm diameter.
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Topside Illuminated Large Area Monitor Photodiode
PD00T1 is a topside illuminated Very chip featuring a very large detecting area with 500 µm diameter.
Read MorePD70X1 on Carrier
128 Gbaud Photodiode with Integrated Lens
PD70X1 is an InGaAs/InP very high-speed photodiode chip flip-chip soldered on a metallized ceramic carrier with ground-signal-ground (GSG) contact layout. The photodiode is optimized for 128 Gbaud coherent telecom receivers (800G ZR/ZR+), microwave photonic links, RF over fiber as well as test and measurement applications.
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Optical Receiver Module with High Quantum Efficiency Photodiode
PX05S3 is a PD05S1 photodiode chip packaged in a TO-5 header and capped with a flat window TO-cap. The photodiode offers a very low dark current in combination with an excellent responsivity in the wavelength region from 980 nm to 1620 nm.
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10 Gb/s Topside Illuminated APD
APD10F1 is a topside illuminated, high speed avalanche photodiode (APD) chip with a large dual pad layout allowing placement of multiple wire bonds on one pad. Key strengths of this innovative APD are its low excess noise resulting in receiver sensitivities of -34.5 dBm @ BER 5e-5 with a simultaneous -31.0 dBm @ BER 1e-12 […]
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Compact Side Illuminated Monitor Photodiode
PD00Q1 is a side illuminated photodiode chip optimized for monitoring edge emitting DFB and FP lasers used in datacom and telecom applications. It comes with a wide detection window in an ultra-compact form factor.
Read MorePD50X1 on Carrier
112 Gbaud Photodiode with Integrated Lens
PS50X1 is an assembly of a single 112 Gbaud photodiode chip flip-chip soldered onto a metallized ceramic carrier with coplanar contact layout. The bottom illuminated InGaAs p-i-n photodiode structure with an integrated backside lens is optimized for 112 Gbd PAM-4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF over fiber as well as test […]
Read MorePD00L1 on wrap-around Carrier
Top Illuminated Large Area Monitor Photodiode
PD00L1 is a topside illuminated InGaAs/InP monitor photodiode chip featuring a large optical aperture with a diameter of 300 µm. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs. This monitor photodiode offers an excellent responsivity in the wavelength region […]
Read MoreAPD10D1 on Carrier
10 Gb/s Avalanche Photodiode with Integrated Lens
APD10D1 is a bottom illuminated, high speed avalanche photodiode (APD) chip with an integrated backside lens. A key strength of this innovative APD is its low excess noise, allowing receiver sensitivities of -34 dBm @ BER 5e-5 when used with an appropriate TIA.
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56 Gbaud Photodiode
Ultra high-speed photodiode chip with a tapered coplanar transmission line. The topside illuminated p-i-n photodiode structure is optimized for 56 Gbaud PAM-4 (400GBASE-DR4 and 400G-FR4) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications.
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Linear Mode APD
APD00A1 is a backside illuminated, long-wavelength avalanche photodiode chip with a large optical aperture of 180 µm. Key strengths of this APD are a low excess noise and a high responsivity. The APD is optimized for sensing and LiDAR applications in the wavelength region from 990 up to 1650 nm. The APD chip has one anode […]
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Large Area GaAs Photodiode
PD00S1 is a large area GaAs photodiode chip with 2 mm diameter detecting area. The topside illuminated p-i-n photodiode structure is optimized for monitoring applications. It offers an excellent responsivity in the wavelength region from 800 to 860 nm. Features Optimized for monitoring applications Large optical aperture of 2 mm High responsivity: 0.6 A/W @ […]
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10 Gb/s Topside Illuminated APD
APD10G1 is a topside illuminated, high speed avalanche photodiode (APD) chip with a large dual pad layout allowing placement of multiple wire bonds on one pad.
Key strengths of this innovative APD are its low excess noise and its high optical damage threshold of up to +5 dBm.
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