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PD05G1
High Quantum Efficiency Photodiode

PD05G1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 90 µm. The p-i-n photodiode structure is optimized for applications requiring high quantum efficiency, but is also suitable for datacom and telecom applications up to 2.5 Gb/s, as well as monitoring, instrumentation, sensing and LiDAR applications. The photodiode […]

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PD05S1
High Quantum Efficiency Photodiode

PD05S1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 120 µm. The p-i-n photodiode structure is optimized for datacom and telecom applications up to 2.5 Gb/s, as well as laser monitoring, sensing, LiDAR and quantum communication applications. The photodiode offers a very low dark current in […]

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PD00L1 on Small-Sized Carrier
Topside Illuminated Large Area Monitor Photodiode

PD00L1 is a topside illuminated InGaAs/InP monitor photodiode chip featuring a large optical aperture with a diameter of 300 µm. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs. This monitor photodiode offers an excellent responsivity in the wavelength region […]

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PD00V1
Topside Illuminated Large Area Monitor Photodiode

PD00V1 is a topside illuminated Very chip featuring a very large detecting area with 2 mm diameter. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs, sensing, LiDAR and instrumentation applications. This monitor photodiode offers an excellent responsivity in […]

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PD00W1
Topside Illuminated Large Area Monitor Photodiode

PD00W1 is a topside illuminated Very chip featuring a very large detecting area with 3 mm diameter.

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PD00U1
Topside Illuminated Large Area Monitor Photodiode

PD00U1 is a topside illuminated Very chip featuring a very large detecting area with 1 mm diameter.

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PD00T1
Topside Illuminated Large Area Monitor Photodiode

PD00T1 is a topside illuminated Very chip featuring a very large detecting area with 500 µm diameter.

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PD70X1 on Carrier
128 Gbaud Photodiode with Integrated Lens

PD70X1 is an InGaAs/InP very high-speed photodiode chip flip-chip soldered on a metallized ceramic carrier with ground-signal-ground (GSG) contact layout. The photodiode is optimized for 128 Gbaud coherent telecom receivers (800G ZR/ZR+), microwave photonic links, RF over fiber as well as test and measurement applications.

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PX05S3
Optical Receiver Module with High Quantum Efficiency Photodiode

PX05S3 is a PD05S1 photodiode chip packaged in a TO-5 header and capped with a flat window TO-cap. The photodiode offers a very low dark current in combination with an excellent responsivity in the wavelength region from 980 nm to 1620 nm.

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APD10F1
10 Gb/s Topside Illuminated APD

APD10F1 is a topside illuminated, high speed avalanche photodiode (APD) chip with a large dual pad layout allowing placement of multiple wire bonds on one pad. Key strengths of this innovative APD are its low excess noise resulting in receiver sensitivities of -34.5 dBm @ BER 5e-5 with a simultaneous -31.0 dBm @ BER 1e-12 […]

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PD00Q1
Compact Side Illuminated Monitor Photodiode

PD00Q1 is a side illuminated photodiode chip optimized for monitoring edge emitting DFB and FP lasers used in datacom and telecom applications. It comes with a wide detection window in an ultra-compact form factor.

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PD50X1 on Carrier
112 Gbaud Photodiode with Integrated Lens

PS50X1 is an assembly of a single 112 Gbaud photodiode chip flip-chip soldered onto a metallized ceramic carrier with coplanar contact layout. The bottom illuminated InGaAs p-i-n photodiode structure with an integrated backside lens is optimized for 112 Gbd PAM-4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF over fiber as well as test […]

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APD10D1 on Carrier
10 Gb/s Avalanche Photodiode with Integrated Lens

APD10D1 is a bottom illuminated, high speed avalanche photodiode (APD) chip with an integrated backside lens. A key strength of this innovative APD is its low excess noise, allowing receiver sensitivities of -34 dBm @ BER 5e-5 when used with an appropriate TIA.

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PD40P1
56 Gbaud Photodiode

Ultra high-speed photodiode chip with a tapered coplanar transmission line. The topside illuminated p-i-n photodiode structure is optimized for 56 Gbaud PAM-4 (400GBASE-DR4 and 400G-FR4) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications.

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APD00A1
Linear Mode APD

APD00A1 is a backside illuminated, long-wavelength avalanche photodiode chip with a large optical aperture of 180 µm. Key strengths of this APD are a low excess noise and a high responsivity. The APD is optimized for sensing and LiDAR applications in the wavelength region from 990 up to 1650 nm. The APD chip has one anode […]

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