PX05G3
Optical Receiver Module with High Quantum Efficiency Photodiode
PX05G3 is a PD05G1 photodiode chip packaged in a TO-46 header and capped with a flat window TO-cap. The photodiode offers a very low dark current in combination with an excellent responsivity in the wavelength region from 1260 nm to 1620 nm.
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High Quantum Efficiency Photodiode
PD05G1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 90 µm. The p-i-n photodiode structure is optimized for applications requiring high quantum efficiency, but is also suitable for datacom and telecom applications up to 2.5 Gb/s, as well as monitoring, instrumentation, sensing and LiDAR applications. The photodiode […]
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High Quantum Efficiency Photodiode
PD05S1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 120 µm. The p-i-n photodiode structure is optimized for datacom and telecom applications up to 2.5 Gb/s, as well as laser monitoring, sensing, LiDAR and quantum communication applications. The photodiode offers a very low dark current in […]
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Topside Illuminated Large Area Monitor Photodiode
PD00L1 is a topside illuminated InGaAs/InP monitor photodiode chip featuring a large optical aperture with a diameter of 300 µm. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs. This monitor photodiode offers an excellent responsivity in the wavelength region […]
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Topside Illuminated Large Area Monitor Photodiode
PD00V1 is a topside illuminated Very chip featuring a very large detecting area with 2 mm diameter. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs, sensing, LiDAR and instrumentation applications. This monitor photodiode offers an excellent responsivity in […]
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Topside Illuminated Large Area Monitor Photodiode
PD00W1 is a topside illuminated Very chip featuring a very large detecting area with 3 mm diameter.
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Topside Illuminated Large Area Monitor Photodiode
PD00U1 is a topside illuminated Very chip featuring a very large detecting area with 1 mm diameter.
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Topside Illuminated Large Area Monitor Photodiode
PD00T1 is a topside illuminated Very chip featuring a very large detecting area with 500 µm diameter.
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128 Gbaud Photodiode with Integrated Lens
PD70X1 is an InGaAs/InP very high-speed photodiode chip flip-chip soldered on a metallized ceramic carrier with ground-signal-ground (GSG) contact layout. The photodiode is optimized for 128 Gbaud coherent telecom receivers (800G ZR/ZR+), microwave photonic links, RF over fiber as well as test and measurement applications.
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Optical Receiver Module with High Quantum Efficiency Photodiode
PX05S3 is a PD05S1 photodiode chip packaged in a TO-5 header and capped with a flat window TO-cap. The photodiode offers a very low dark current in combination with an excellent responsivity in the wavelength region from 980 nm to 1620 nm.
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10 Gb/s Topside Illuminated APD
APD10F1 is a topside illuminated, high speed avalanche photodiode (APD) chip with a large dual pad layout allowing placement of multiple wire bonds on one pad. Key strengths of this innovative APD are its low excess noise resulting in receiver sensitivities of -34.5 dBm @ BER 5e-5 with a simultaneous -31.0 dBm @ BER 1e-12 […]
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Compact Side Illuminated Monitor Photodiode
PD00Q1 is a side illuminated photodiode chip optimized for monitoring edge emitting DFB and FP lasers used in datacom and telecom applications. It comes with a wide detection window in an ultra-compact form factor.
Read MorePD50X1 on Carrier
112 Gbaud Photodiode with Integrated Lens
PS50X1 is an assembly of a single 112 Gbaud photodiode chip flip-chip soldered onto a metallized ceramic carrier with coplanar contact layout. The bottom illuminated InGaAs p-i-n photodiode structure with an integrated backside lens is optimized for 112 Gbd PAM-4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF over fiber as well as test […]
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10 Gb/s Avalanche Photodiode with Integrated Lens
APD10D1 is a bottom illuminated, high speed avalanche photodiode (APD) chip with an integrated backside lens. A key strength of this innovative APD is its low excess noise, allowing receiver sensitivities of -34 dBm @ BER 5e-5 when used with an appropriate TIA.
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56 Gbaud Photodiode
Ultra high-speed photodiode chip with a tapered coplanar transmission line. The topside illuminated p-i-n photodiode structure is optimized for 56 Gbaud PAM-4 (400GBASE-DR4 and 400G-FR4) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications.
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