GaAs PD

At Albis, we offer a large catalogue of GaAs photodiodes for various applications from few Gb/s up to high data rate of 25 Gb/s. All photodiodes offer an excellent trade-off between fast speed of response combined with a large active diameter and high responsivity in the wavelength region from 830 to 860 nm. The pad metallization can be either optimized for wire or flip-chip bonding. The arrays feature a channel pitch with photolithographic precision which strongly simplifies optical alignement with fiber ribbon or photonic integrated circuits.

Our photodiodes can be customized. Whether you prefer wire-bonding or flip-chip soldering, array or single channel devices our team is ready to tackle your requirements. Like to know more about customization, click here

Single channel GaAs p-i-n photodiode chips

Multiple channel GaAs p-i-n photodiode chips