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Moosstrasse 2a
8803 Rueschlikon, Switzerland

At Albis, we offer a large catalogue of GaAs photodiodes for various applications from few Gb/s up to high data rate of 25 Gb/s. All photodiodes offer an excellent trade-off between fast speed of response combined with a large active diameter and high responsivity in the wavelength region from 830 to 860 nm. The pad metallization can be either optimized for wire or flip-chip bonding. The arrays feature a channel pitch with photolithographic precision which strongly simplifies optical alignement with fiber ribbon or photonic integrated circuits.

Our photodiodes can be customized. Whether you prefer wire-bonding or flip-chip soldering, array or single channel devices our team is ready to tackle your requirements. Like to know more about customization, click here

Single channel GaAs p-i-n photodiode chips

PD20L125 Gb/sTopRead More
PD10Y114 Gb/sTopRead More
PD10K110 Gb/sTopRead More
PD05K15 Gb/sTopRead More
PD00K11 Gb/sTopRead More
PD00S11 Gb/sTopRead More
PX00S11 Gb/sTopRead More

Multiple channel GaAs p-i-n photodiode chips

PD40L456 Gbd4TopRead More
PD20Kx25 Gb/sn x 4TopRead More
PD10Yx14 Gb/smultipleTopRead More
PD10Kx10 Gb/sn x 4TopRead More
PD05Kx5 Gb/sn x 4TopRead More