InP based avalanche photodiodes (APD) are highly sensitive long-wavelengths photodiodes. APDs can be thought of as photodiodes that provide a built-in first stage of low noise gain through an internal current amplification mechanism called avalanche multiplication. Due to the low-noise gain, APDs offer superior receiver sensitivity compared to optical receivers based on pin photodiodes. Albis 2.5 Gb/s and 10 Gb/s APDs are based on state-of-the art technologies and are designed consequently for robust, high yield manufacturing, uniform device characteristics, reliability and ease of operation. Low temperature dependence of gain characteristics allow the use of the APD in unregulated receivers over a wide temperature range from -40°C to 85°C.
Like all our photodiodes, our APD chips can be customized. Whether you prefer top-illumination or bottom-illumination, wire-bonding or flip-chip soldering, array or single channel devices, our team is ready to tackle your requirements. Like to know more about customization, click here
Albis Optoelectronics is a leading designer, developer and manufacturer of high-speed photodiode chips. The company offers a diversified product portfolio consisting of InP and GaAs based PIN photodiodes, APDs and high speed detector modules up to 60 GHz. These photodiode products are completely manufactured in-house in fully owned clean-room facilities.
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