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PD00L1 on wrap-around Carrier
Top Illuminated Large Area Monitor Photodiode

PD00L1 is a topside illuminated InGaAs/InP monitor photodiode chip featuring a large optical aperture with a diameter of 300 µm. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs. This monitor photodiode offers an excellent responsivity in the wavelength region […]

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PD00S1
Large Area GaAs Photodiode

PD00S1 is a large area GaAs photodiode chip with 2 mm diameter detecting area. The topside illuminated p-i-n photodiode structure is optimized for monitoring applications. It offers an excellent responsivity in the wavelength region from 800 to 860 nm. Features Optimized for monitoring applications Large optical aperture of 2 mm High responsivity: 0.6 A/W @ […]

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PD00L1
Top Illuminated Large Area Monitor Photodiode

Top illuminated monitor photodiode chip featuring a very large optical aperture with a diameter of 300 µm.

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PD00H1
Side Illuminated Monitor Photodiode

Side illuminated photodiode chip with a curved side facet and a large active area for monitoring the optical output emitted from the backside of edge emitting lasers.

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PD00E1
Side Illuminated Low Entry Monitor Photodiode

Side illuminated photodiode chip with an angled side facet and a large active area for monitoring the optical output emitted from the backside of edge emitting lasers that are mounted p-side down.

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PD00D1
Side Illuminated Monitor Photodiode

Side illuminated photodiode chip with a curved side facet and a large active area for monitoring the optical output emitted from the backside of edge emitting lasers.

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