How is the metallization of photodiode pads constructed ?
The pads on Albis photodiode chips are built from a stack of different metals. On the chip front-side we offer two different stacks. The first stack alternative is optimized for wire-bonding. It consists of an adhesion layer followed by 1.3 µm of pure gold. The second alternative is optimized for soldering. Again it consists of […]
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5 Gb/s GaAs Photodiode
Top-illuminated photodiode chip designed for coupling with 50/125 or 62/125 multimode fibers used in short-wavelength 5 Gb/s datacom applications.
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12 Gb/s Photodiode
Top illuminated photodiode chip for single-mode data and telecom applications up to 12.7 Gb/s.
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12 Gb/s Long Wavelength Photodiode
Top illuminated photodiode chip for single-mode data and telecom applications up to 12 Gb/s.
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128 Gbd 2D Array Bottom Chip on Carrier 112 Gbd 1550 5 Gb/s multi-mode 20 GHz Lens PM Module 10 GHz 25 Gb/s High Power PD Side 40 GHz 12 Gb/s 2.5 Gb/s High Quantum Efficiency 28/56 Gbd Ultrafast InGaAs PD 1 Gb/s 10 Gb/s APD 30 GHz PX Packaged PD 28 Gbd 850 DC DC 1.5 GHz 56 Gbd Position Sensing Array Single 14 Gb/s Top single-mode 1310 Monitor PD
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