How is the metallization of photodiode pads constructed ?
The pads on Albis photodiode chips are built from a stack of different metals. On the chip front-side we offer two different stacks. The first stack alternative is optimized for wire-bonding. It consists of an adhesion layer followed by 1.3 µm of pure gold. The second alternative is optimized for soldering. Again it consists of […]
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5 Gb/s GaAs Photodiode
Top-illuminated photodiode chip designed for coupling with 50/125 or 62/125 multimode fibers used in short-wavelength 5 Gb/s datacom applications.
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12 Gb/s Photodiode
Top illuminated photodiode chip for single-mode data and telecom applications up to 12.7 Gb/s.
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12 Gb/s Long Wavelength Photodiode
Top illuminated photodiode chip for single-mode data and telecom applications up to 12 Gb/s.
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56 Gbd 20 GHz 128 Gbd 5 Gb/s 10 Gb/s PM Module Ultrafast InGaAs PD 1310 High Quantum Efficiency 40 GHz APD ROSA 14 Gb/s 12 Gb/s 1 Gb/s Position Sensing 2.5 Gb/s PX Packaged PD 850 1.5 GHz Bottom Top 28 Gbd Array Monitoring and Sensing PD 25 Gb/s 1550 LC receptacle 112 Gbd multi-mode 28/56 Gbd DC Lens Single High Power PD 30 GHz Side Chip on Carrier single-mode 10 GHz 2D Array DC APD
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