How is the metallization of photodiode pads constructed ?
The pads on Albis photodiode chips are built from a stack of different metals. On the chip front-side we offer two different stacks. The first stack alternative is optimized for wire-bonding. It consists of an adhesion layer followed by 1.3 µm of pure gold. The second alternative is optimized for soldering. Again it consists of […]
Read MorePD05K1
5 Gb/s GaAs Photodiode
Top-illuminated photodiode chip designed for coupling with 50/125 or 62/125 multimode fibers used in short-wavelength 5 Gb/s datacom applications.
Read MorePD10E1
12 Gb/s Photodiode
Top illuminated photodiode chip for single-mode data and telecom applications up to 12.7 Gb/s.
Read MorePD10B1
12 Gb/s Long Wavelength Photodiode
Top illuminated photodiode chip for single-mode data and telecom applications up to 12 Gb/s.
Read MorePopular Search Terms
PX Packaged PD Top 1310 Lens 10 GHz 30 GHz Side Array 5 Gb/s 28 Gb/s Chip on Carrier 10 Gb/s 40 GHz Ultrafast InGaAs PD 112 Gbaud Bottom 20 GHz 32 Gb/s 56 Gbaud High Power PD 28 / 56 Gbaud Single 1.5 GHz single-mode Monitor PD APD 14 Gb/s 850 DC 1550 12 Gb/s 1 Gb/s 25 Gb/s multi-mode 28 Gbaud 2.5 Gb/s
Need More Information?