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28G APD with Integrated Lens


Ultra high speed avalanche photodiode (APD) chip with a Y-shaped pad layout and an integrated backside lens. Key strengths of this innovative APD are its large dynamic range and a high optical damage threshold of up to +5 dBm. Typical applications include 28 Gbaud PAM-4, 100GBASE-ER4 and 25G / 50G PON.

The APD provides low noise multiplication and a high gain-bandwidth product which enables the design of high sensitivity 28G receivers. Record sensitivity of -25 dBm @ BER of 5E-5 has been demonstrated.
The integrated backside lens focuses the incoming light beam on the topside detecting area, enabling an easy and efficient optical coupling.


  • High optical damage threshold: up to +5 dBm
  • Large dynamic range
  • Low noise multiplication
  • High gain-bandwidth product
  • High responsivity: 5 A/W
  • Large lens diameter of 100 μm
  • Low operating bias: 20 V
  • Low temperature dependence: 10 mV/°C
  • Layout suitable for wire bonding and flip-chip soldering

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