Albis and HiLight are promoting their latest 10G APD and CMOS TIA-receiver products by jointly demonstrating high levels of performance achieved with this unique APD-TIA combination.

The microwave photodetector PQS40A-L receives prestigious 2023 Lightwave Innovation Award.

At the upcoming ECOC 2022 exhibition in Basel, Albis Optoelectronics will present its new 40 GHz photodetector PQS40A-L, a small sized packaged device, designed for the detection of RF-modulated optical signals.

Albis Optoelectronics announced today that both its entries, the 28 Gbaud avalanche photodiode APD20D1 and the 800G photodiode array PS60X4, were recognized among the best by the 2022 Lightwave Innovation Reviews.

We are delighted to announce that we are now a member of EPIC – the world leading photonics industry association!

At the upcoming virtual OFC exhibition Albis will present its new, topside illuminated 28 Gbd APD chip APD20E1.
Key features of this innovative APD are a large dynamic range and a high optical damage threshold of up to +5 dBm.

ECOC Exhibition 2020 is the first time ever for Albis to participate in a virtual event. Come and visit us at www.ecoclive.com and find out about our latest product releases such as our PS60X1, a 112 Gbaud/s high speed photodiode assembly targeting 800G transmission links. We look forward to shake hands virtually!

The European R&D project “SIPhoDiAS” aims at developing space photonic components and sub-systems for the new telecom satellite generation.

New highly sensitive APD chip APD05C1. This linear mode APD is optimized for long-wavelength, eye safe LiDAR applications and comes with low dark current and low excess noise.

A consortium of 31 European electronics packaging, optics and photonics key players, leading equipment suppliers and testing experts launched a new project, “Advanced packaging for photonics, optics and electronics for low cost manufacturing in Europe,” simply called APPLAUSE. The project fosters the European semiconductor value chain by building new tools, methods and processes for high volume manufacturing. The 34M€ total budget for the three-year project is co-funded by Horizon 2020 and national funding agencies and industries, as a part of the Electronics Components and Systems for European Leadership Joint Undertaking (ECSEL JU).

High power, high linearity microwave photodetector, designed for direct optical-to-electrical conversion of RF-modulated optical signals at 20 GHz. It offers a typical bandwidth of 22 GHz for photocurrents up to 50 mA, a responsivity of 0.5 A/W and high linearity of +30 dBm OIP3 @ 20 GHz, 30 mA.

Albis Optoelectronics celebrates its 15 years anniversary.

At the upcoming ECOC in Rome, Albis will present its new PD40X1 photodiode chip with integrated backside lens targeting 56 Gbaud PAM-4 and 100G Single Lambda applications.

PAM-4 photodiode solutions including single channel and array photodiodes, available as bare die chip or mounted on a ceramic carrier. The bandwidth of these high speed components ranges from 20 to 40 GHz.