At the upcoming virtual OFC exhibition Albis will present its new, topside illuminated 28 Gbd APD chip APD20E1.
Key features of this innovative APD are a large dynamic range and a high optical damage threshold of up to +5 dBm.

ECOC Exhibition 2020 is the first time ever for Albis to participate in a virtual event. Come and visit us at www.ecoclive.com and find out about our latest product releases such as our PS60X1, a 112 Gbaud/s high speed photodiode assembly targeting 800G transmission links. We look forward to shake hands virtually!

The European R&D project “SIPhoDiAS” aims at developing space photonic components and sub-systems for the new telecom satellite generation.

New highly sensitive APD chip APD05C1. This linear mode APD is optimized for long-wavelength, eye safe LiDAR applications and comes with low dark current and low excess noise.

A consortium of 31 European electronics packaging, optics and photonics key players, leading equipment suppliers and testing experts launched a new project, “Advanced packaging for photonics, optics and electronics for low cost manufacturing in Europe,” simply called APPLAUSE. The project fosters the European semiconductor value chain by building new tools, methods and processes for high volume manufacturing. The 34M€ total budget for the three-year project is co-funded by Horizon 2020 and national funding agencies and industries, as a part of the Electronics Components and Systems for European Leadership Joint Undertaking (ECSEL JU).

High power, high linearity microwave photodetector, designed for direct optical-to-electrical conversion of RF-modulated optical signals at 20 GHz. It offers a typical bandwidth of 22 GHz for photocurrents up to 50 mA, a responsivity of 0.5 A/W and high linearity of +30 dBm OIP3 @ 20 GHz, 30 mA.

Albis Optoelectronics celebrates its 15 years anniversary.

At the upcoming ECOC in Rome, Albis will present its new PD40X1 photodiode chip with integrated backside lens targeting 56 Gbaud PAM-4 and 100G Single Lambda applications.

PAM-4 photodiode solutions including single channel and array photodiodes, available as bare die chip or mounted on a ceramic carrier. The bandwidth of these high speed components ranges from 20 to 40 GHz.

In close cooperation with customers, Albis has developed complex assembly solutions that meet stringent requirements with regards to alignment precision, bandwidth and layout complexity. The Albis avalanche and pin photodiode portfolio can now be supplied as flip-chip bonded or wire-bonded devices on customized 2D or 3D (wrap-around) carriers.

Our 25G Long-Wavelength APD wins the second place in the Lightwave Innovation Award with Honorable Mention.

Albis Optoelectronics is going to celebrate its 10 years anniversary.

PQW30A-S, a hermetically packaged, short wavelength, 30 GHz RF photodetector module is now available. The module contains a high performance Albis photodiode and a linear, medium gain broadband amplifier. The optical input is supplied through a single- or multimode fiber.

Following a successful Management Buyout, Albis Optoelectronics resurfaces as the renowned industry brand for high performance photodetector products. The change of company name to Albis Optoelectronics, previously used by the entity from 2003 to 2008, designates the final step in the separation from Enablence Technologies Inc.