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Search Results for: PIN

A photodiode with integrated lens. Why?

In this article Christophe explains the motivations to create photodiodes with integrated backside lens and shows their advantages in terms of optical alignment.

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How do you test your photodiodes before shipment?

Before shipment, all photodiodes are 100% tested on wafer level and are subject to out-going visual inspection.

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What is the cut-off wavelength of InGaAs photodiodes ?

The long end of the spectral response of InGaAs photodiodes is limited by the bandgap energy of InGaAs which is 0.75eV at room temperature (corresponding to about 1620nm). Hence incoming light with a wavelength beyond that limit (i.e. light with a larger wavelength) will not be absorbed as InGaAs is transparent for such wavelengths. In […]

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Why are you not using 175°C 2xVop for the qualification of the InGaAs PIN ?

Our HTO test condtions for the qualification are 2000h at 100°C and 2 x Vop which is typically 2 x 2.0 V. Doing so, we apply Telcordia GR-468 Issue 2 Requirements. The underlying assumption for our test conditions are: The dominant failure mechanism that will be observed for our PIN diodes is wearout failure and […]

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What is the cut-off wavelength of GaAs photodiodes ?

The long end of the spectral response of GaAs photodiodes is limited by the bandgap energy of GaAs which is 1.42eV (corresponding to about 870nm). Hence incoming light with a wavelength beyond that limit (i.e. light with a larger wavelength) will not be absorbed as GaAs is transparent for such wavelengths. In the wavelength region […]

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How is the metallization of photodiode pads constructed ?

The pads on Albis photodiode chips are built from a stack of different metals. On the chip front-side we offer two different stacks. The first stack alternative is optimized for wire-bonding. It consists of an adhesion layer followed by 1.3 µm of pure gold. The second alternative is optimized for soldering. Again it consists of […]

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PD20Kx
Scalable 4 x 25 Gb/s GaAs PD Array

Top-illuminated, scalable 4 x 25 Gb/s photodiode array. The arrays are optimized for short reach 850 nm VCSEL based parallel optical interconnects with a speed of up to 25 Gb/s per channel.

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PD10Kx
Scalable 4 x 10 Gb/s GaAs PD Array

Top-illuminated, scalable 4 x 10 Gb/s photodiode array. The arrays are optimized for short reach 850 nm VCSEL based parallel optical interconnects with a speed of up to 10 Gb/s per channel.

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PD05Kx
Scalable 4 x 5 Gb/s GaAs PD Array

Top-illuminated, scalable 4 x 5 Gb/s photodiode array. The arrays are optimized for short reach 850 nm VCSEL based parallel optical interconnects with a speed of up to 5 Gb/s per channel.

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PD05K1
5 Gb/s GaAs Photodiode

Top-illuminated photodiode chip designed for coupling with 50/125 or 62/125 multimode fibers used in short-wavelength 5 Gb/s datacom applications.

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PD10E1
12 Gb/s Photodiode

Top illuminated photodiode chip for single-mode data and telecom applications up to 12.7 Gb/s.

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PD10Vx
Scalable 4 x 12 Gb/s Photodiode Array

Top illuminated, scalable 4 x 28 Gb/s photodiode array with separate anode and cathode pads for each channel.

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PD10B1
12 Gb/s Long Wavelength Photodiode

Top illuminated photodiode chip for single-mode data and telecom applications up to 12 Gb/s.

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PD10A1
14 Gb/s Photodiode

Top illuminated photodiode chip for single-mode data and telecom applications up to 25 Gb/s.

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PD20V4
Scalable 4 x 28 Gb/s Photodiode Array

Top illuminated, scalable 4 x 28 Gb/s photodiode array with separate anode and cathode pads for each channel.

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