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InP based avalanche photodiodes (APD) are highly sensitive long-wavelengths photodiodes. APDs can be thought of as photodiodes that provide a built-in first stage of low noise gain through an internal current amplification mechanism called avalanche multiplication. Due to the low-noise gain, APDs offer superior receiver sensitivity compared to optical receivers based on pin photodiodes. Albis 2.5 Gb/s and 10 Gb/s APDs are based on state-of-the art technologies and are designed consequently for robust, high yield manufacturing, uniform device characteristics, reliability and ease of operation. Low temperature dependence of gain characteristics allow the use of the APD in unregulated receivers over a wide temperature range from -40°C to 85°C.

Like all our photodiodes, our APD chips can be customized. Whether you prefer top-illumination or bottom-illumination, wire-bonding or flip-chip soldering, array or single channel devices, our team is ready to tackle your requirements. Like to know more about customization, click here

25G APD photodiode chips

ProductSpeedIlluminationPackage TypeDetails
APD20D128 GbdLensbare dieRead More
APS20D128 GbdLensceramic carrierRead More
APD20E128 GbdTopbare dieRead More
APD20B125 Gb/sLensbare dieRead More
APD20C125 Gb/sLensbare dieRead More
APS20B1/C125 Gb/sLensceramic carrierRead More

10G APD photodiode chips

ProductSpeedIlluminationPackage TypeDetails
APD10D110 Gb/sLensbare dieRead More
APS10D110 Gb/sLensceramic carrierRead More
APD10E110 Gb/sTopbare dieRead More
APD10F110 Gb/sTopbare dieRead More
APD10G110 Gb/sTopbare dieRead More
APD10Vx10 Gb/sTopbare die arrayRead More
APD10X110 Gb/sLensbare dieRead More

Low Speed APD photodiode chips

ProductSpeedIlluminationPackage TypeDetails
APD05C15 Gb/sLensbare dieRead More
APD05F12.5 Gb/sTopbare dieRead More
APD05Q12.5 Gb/sBottombare dieRead More
APD00A11 Gb/sBottombare dieRead More
APD00M41 Gb/sTopbare dieRead More
APX00M31 Gb/sTopTO-5 headerRead More