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InP based avalanche photodiodes (APD) are highly sensitive long-wavelengths photodiodes. APDs can be thought of as photodiodes that provide a built-in first stage of low noise gain through an internal current amplification mechanism called avalanche multiplication. Due to the low-noise gain, APDs offer superior receiver sensitivity compared to optical receivers based on pin photodiodes. Albis 2.5 Gb/s and 10 Gb/s APDs are based on state-of-the art technologies and are designed consequently for robust, high yield manufacturing, uniform device characteristics, reliability and ease of operation. Low temperature dependence of gain characteristics allow the use of the APD in unregulated receivers over a wide temperature range from -40°C to 85°C.

Like all our photodiodes, our APD chips can be customized. Whether you prefer top-illumination or bottom-illumination, wire-bonding or flip-chip soldering, array or single channel devices, our team is ready to tackle your requirements. Like to know more about customization, click here

Single channel APD photodiode chips

APD20D128 GbdLensRead More
APD20E128 GbdTopRead More
APD20B125 Gb/sLensRead More
APD20C125 Gb/sLensRead More
APD10D110 Gb/sLensRead More
APD10E110 Gb/sTopRead More
APD10G110 Gb/sTopRead More
APD10X110 Gb/sLensRead More
APD05C15 Gb/sLensRead More
APD05F12.5 Gb/sTopRead More
APD05Q12.5 Gb/sBottomRead More
APD00A11 Gb/sBottomRead More

Multiple channel APD photodiode chips

APD10Vx10 Gb/sn x 4TopRead More