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High Quantum Efficiency Photodiode

PD05S1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 120 µm. The p-i-n photodiode structure is optimized for datacom and telecom applications up to 2.5 Gb/s, as well as laser monitoring, sensing, LiDAR and quantum communication applications.

The photodiode offers a very low dark current in combination with an excellent responsivity in the wavelength region from 980 nm to 1620 nm. The small form factor of 250 µm x 250 µm is ideally suited for applications with stringent size limitations.


  • High quantum efficiency: > 95% @ λ = 1550 nm
  • Very high responsivity: 1.2 A/W @ λ = 1550 nm
  • Very low dark current: 60 pA
  • Large light sensitive area: 120 µm
  • Cost effective, ultra-small chip size
  • Also available packaged in TO-can

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