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800G Photodiode Array with Integrated Lens

Ultra high-speed monolithic 4-channel InGaAs/InP photodiode array specifically designed for 112 Gbaud PAM-4 (400GbE and 800GbE) applications. This scalable array features integrated backside lenses and has a channel pitch of 500 µm. The 1×4 basic cell can be repeated n times to provide scalable arrays of 4, 8, 12 or more individual photodiode channels. It offers an excellent responsivity and high speed of response in the wavelength region from 1260 nm to 1620 nm.

The integrated backside lenses focus the incoming light beam on the topside detecting area, enabling easy and efficient optical coupling by increasing the effective active diameter.

PD50Y4 is available as bare die or flip-chip mounted on a customizable carrier.


  • High bandwidth: 50 GHz per channel
  • Photodiode pitch: 500 µm
  • Easy optical coupling through integrated backside lens
  • High responsivity: 0.8 A/W @ 1310 nm
  • G-S-G pad configuration with support pads for flip-chip soldering
  • Also available flip-chip soldered on ceramic carrier

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