
PD00U4 is an InGaAs/InP photodiode segmented into four individual quadrants with small separation of only 30 µm. The topside illuminated four-quadrant photodiode features a very large detecting area with 1 mm diameter. The photodiode structure is optimized for position sensing, beam alignment / profiling and optical tracking applications.
The photodiode offers a very low dark current and an excellent responsivity in the wavelength region from 980 nm to 1620 nm. The anode pad metallization is optimized for wire-bonding. The common cathode metallization on the chip backside consists of solderable metal.
Features
- Large active area of 1 mm diameter
- Very small quadrant separation: 30 um
- Very low dark current
- High responsivity: 1.1 A/W
- Solderable common cathode metallization