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High Quantum Efficiency Photodiode

PD05G1 is a backside illuminated InGaAs/InP photodiode chip featuring a large light sensitive area with a diameter of 90 µm. The p-i-n photodiode structure is optimized for applications requiring high quantum efficiency, but is also suitable for datacom and telecom applications up to 2.5 Gb/s, as well as monitoring, instrumentation, sensing and LiDAR applications.

The photodiode offers an excellent responsivity in the wavelength region from 980 nm to 1620 nm. The small form factor of 250 µm x 250 µm is ideally suited for applications with stringent size limitations. The scalable single photodiode chip enables the creation of convenient 1D or 2D custom arrays with a channel pitch of 250 µm.


  • High quantum efficiency: > 95% @ λ = 1550 nm
  • Very high responsivity: 1.2 A/W @ λ = 1550 nm
  • Large light sensitive area: 90 µm
  • Cost effective, ultra-small chip size
  • Available in custom 1D and 2S arrays
  • Also available packaged in TO-can

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