PD00W1 is a topside illuminated Very chip featuring a very large detecting area with 3 mm diameter. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs, sensing, LiDAR and instrumentation applications.
This monitor photodiode offers an excellent responsivity in the wavelength region from 980 nm to 1620 nm. The anode pad metallization is optimized for wire-bonding. The cathode metallization on the chip backside consists of solderable metal.
- Large topside 3 mm optical aperture
- Wide wavelength range from 980 nm to 1620 nm
- High responsivity: 1.1 A/W
- Very low dark current
- Also available on ceramic wrap-around carrier