PD00W4
Four-Quadrant Position Sensing PD
PD00W4 is an InGaAs/InP photodiode segmented into four individual quadrants with small separation of only 30 µm. The topside illuminated four-quadrant photodiode features a very large detecting area with 3 mm diameter. The photodiode structure is optimized for position sensing, beam alignment / profiling and optical tracking applications.
The photodiode offers a very low dark current and an excellent responsivity in the wavelength region from 980 nm to 1620 nm. The anode pad metallization is optimized for wire-bonding. The common cathode metallization on the chip backside consists of solderable metal.
Features
- Large active area of 3 mm diameter
- Very small quadrant separation: 30 um
- Very low dark current
- High responsivity: 1.1 A/W
- Very low dark current
- Solderable common cathode metallization
Popular Search Terms
Ultrafast InGaAs PD 28/56 Gbd Chip on Carrier Top 5 Gb/s DC Monitor PD Bottom 56 Gbd High Power PD 30 GHz 850 10 Gb/s PM Module multi-mode Single 2D Array 12 Gb/s 10 GHz APD 112 Gbd 14 Gb/s Array 32 Gb/s 25 Gb/s single-mode 40 GHz PX Packaged PD 128 Gbd 28 Gbd 1.5 GHz 1550 Lens Side 1 Gb/s Position Sensing 20 GHz 2.5 Gb/s 1310
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