PD00W4
Four-Quadrant Position Sensing PD
PD00W4 is an InGaAs/InP photodiode segmented into four individual quadrants with small separation of only 30 µm. The topside illuminated four-quadrant photodiode features a very large detecting area with 3 mm diameter. The photodiode structure is optimized for position sensing, beam alignment / profiling and optical tracking applications.
The photodiode offers a very low dark current and an excellent responsivity in the wavelength region from 980 nm to 1620 nm. The anode pad metallization is optimized for wire-bonding. The common cathode metallization on the chip backside consists of solderable metal.
Features
- Large active area of 3 mm diameter
- Very small quadrant separation: 30 um
- Very low dark current
- High responsivity: 1.1 A/W
- Solderable common cathode metallization
Popular Search Terms
High Power PD Ultrafast InGaAs PD APD single-mode 1.5 GHz Top DC 5 Gb/s 20 GHz Single 10 Gb/s 2.5 Gb/s LC receptacle Position Sensing High Quantum Efficiency Lens DC Array 10 GHz 30 GHz 112 Gbd Monitoring and Sensing PD APD ROSA 850 multi-mode 1 Gb/s 40 GHz 14 Gb/s PX Packaged PD Bottom 28 Gbd 28/56 Gbd Side 56 Gbd 12 Gb/s 2D Array 128 Gbd 1310 25 Gb/s PM Module 1550 Chip on Carrier
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