PD00U1
Topside Illuminated Large Area Monitor Photodiode
PD00U1 is a topside illuminated Very chip featuring a very large detecting area with 1 mm diameter. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs, sensing, LiDAR and instrumentation applications.
This monitor photodiode offers an excellent responsivity in the wavelength region from 980 nm to 1620 nm. The anode pad metallization is optimized for wire-bonding. The cathode metallization on the chip backside consists of solderable metal.
Features
- Large topside 1 mm optical aperture
- Wide wavelength range from 980 nm to 1620 nm
- High responsivity: 1.1 A/W
- Very low dark current
- Also available on ceramic wrap-around carrier
Popular Search Terms
28 Gbd 56 Gbd Array 1 Gb/s 128 Gbd Monitoring and Sensing PD PM Module 10 GHz 25 Gb/s PX Packaged PD 2D Array 10 Gb/s DC 1550 1310 Single 112 Gbd APD Lens 850 2.5 Gb/s High Power PD multi-mode LC receptacle Chip on Carrier single-mode 1.5 GHz Position Sensing 5 Gb/s 12 Gb/s 14 Gb/s High Quantum Efficiency Top 30 GHz Bottom 20 GHz Side DC Ultrafast InGaAs PD 28/56 Gbd 40 GHz APD ROSA
Need More Information?