PD05J16 on wrap-around Carrier
16-Channel Balanced Photodiode Array
Compact monolithic array of 16 InGaAs/InP photodiodes with large optical apertures of 120 µm separated by a 300 μm pitch. The backside illuminated p-i-n photodiode structures are optimized for low speed monitoring applications in data- and telecom up to 2.5 Gb/s. They offer an excellent responsivity and high speed of response in the wavelength region from 1260 nm to 1620 nm.
The backside illuminated 16-channel photodiode array is flip-chip soldered on a ceramic submount with wrap-around metallization. The conductor lines are designed for balanced detection using eight pairs of photodiodes.
Features
- Optimized for balanced detection
- Balanced detection using eight pairs of photodiodes
- Easy optical coupling into large backside optical aperture
- High responsivity: 0.95 A/W @ 1550 nm
- Customized carrier layouts
Popular Search Terms
112 Gbd Top 10 Gb/s 128 Gbd DC 14 Gb/s Ultrafast InGaAs PD Single 30 GHz High Power PD PX Packaged PD 40 GHz multi-mode 850 2D Array Array Monitoring and Sensing PD 1310 25 Gb/s 1.5 GHz Bottom 28 Gbd APD ROSA DC 20 GHz 12 Gb/s 28/56 Gbd LC receptacle 2.5 Gb/s 1550 5 Gb/s 1 Gb/s Side 56 Gbd Position Sensing Chip on Carrier Lens APD single-mode PM Module 10 GHz High Quantum Efficiency
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