Ultra high speed InGaAs/InP photodiode chip with an integrated backside lens. The bottom illuminated p-i-n photodiode structure with an integrated backside lens is optimized for 112 Gbd PAM-4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications. It offers an excellent responsivity and high speed of response in the wavelength region from 1260 to 1620 nm.
The integrated backside lens focuses the incoming light beam on the topside detecting area, enabling an easy and efficient optical coupling.
- High bandwidth: 60 GHz
- Easy optical coupling through integrated backside lens
- Large lens diameter of 100 µm
- High responsivity of 0.65 A/W
- G-S-G pad configuration with support pads for flip-chip soldering