PD40E1
50G Bottom Illuminated Photodiode
Ultra high speed InGaAs/InP photodiode chip optimized for applications up to 50 GHz. The bottom illuminated p-i-n photodiode offers an excellent responsivity and high speed of response in the wavelength region from 1260 to 1620 nm. Over the entire wavelength range a broadband AR coating provides low reflectivity and high return loss.
Features
- Ultra high speed
- Easy optical coupling through large backside light entry area
- Typical responsivity of 0.7 A/W
- Low capacitance: 55 fF
- G-S-G pad configuration with support pads for flip-chip soldering
Popular Search Terms
Single 2D Array 128 Gbd Ultrafast InGaAs PD 12 Gb/s DC single-mode Chip on Carrier 1310 Bottom PX Packaged PD 1550 14 Gb/s 28/56 Gbd 32 Gb/s 25 Gb/s 28 Gbd 10 Gb/s 56 Gbd Lens 1.5 GHz 40 GHz 1 Gb/s APD High Power PD 112 Gbd Array Top Monitor PD 5 Gb/s 10 GHz PM Module 850 Position Sensing 30 GHz 20 GHz Side 2.5 Gb/s multi-mode
Need More Information?