PD40E1
50G Bottom Illuminated Photodiode
Ultra high speed InGaAs/InP photodiode chip optimized for applications up to 50 GHz. The bottom illuminated p-i-n photodiode offers an excellent responsivity and high speed of response in the wavelength region from 1260 to 1620 nm. Over the entire wavelength range a broadband AR coating provides low reflectivity and high return loss.
Features
- Ultra high speed
- Easy optical coupling through large backside light entry area
- Typical responsivity of 0.7 A/W
- Low capacitance: 55 fF
- G-S-G pad configuration with support pads for flip-chip soldering