PD10E1
12 Gb/s Photodiode
InGaAs/InP high speed photodiode chip with a dual-pad layout and a large optical aperture. The top illuminated photodiode is optimized for single-mode data- and telecom applications up to 12.7 Gb/s and offers an excellent responsivity and high speed of response in the wavelength region from 1260 to 1620 nm. Over this entire wavelength range, a broadband AR coating provides low reflectivity and high return loss. The photodiode has a low capacitance and achieves full speed at low bias voltages.
Features
- Large optical aperture
- High responsivity: 0.95 A/W
- Low capacitance: 120 fF
- Low dark current: 2 nA
- Large pads with space for two wire-bonds, also suitable for flip-chip bonding