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12 Gb/s Photodiode


InGaAs/InP high speed photodiode chip with a dual-pad layout and a large optical aperture. The top illuminated photodiode is optimized for single-mode data- and telecom applications up to 12.7 Gb/s and offers an excellent responsivity and high speed of response in the wavelength region from 1260 to 1620 nm. Over this entire wavelength range, a broadband AR coating provides low reflectivity and high return loss. The photodiode has a low capacitance and achieves full speed at low bias voltages.


  • Large optical aperture
  • High responsivity: 0.95 A/W
  • Low capacitance: 120 fF
  • Low dark current: 2 nA
  • Large pads with space for two wire-bonds, also suitable for flip-chip bonding

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