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New 28 Gbd Avalanche Photodiode (APD) with high optical damage threshold

At the upcoming virtual OFC exhibition Albis will present its new, topside illuminated 28 Gbd APD chip APD20E1.
Key features of this innovative APD are a large dynamic range and a high optical damage threshold of up to +5 dBm. The company states that 100% of devices produced are actively tested for this extended damage level, thus guaranteeing high power operation in the field.

On top of that, this novel APD chip provides low noise multiplication and a high gain-bandwidth product enabling the design of high sensitivity 28G receivers. Record sensitivities of -25 dBm @ BER of 5E-5 have been demonstrated. Typical applications include 28 Gbaud PAM-4, 100GBASE-ER4 and 25G EPON.

Other 28 Gbd APD solutions offered by Albis consist of bottom-illuminated chips with an integrated backside lens. The integrated backside lens focuses the incoming light beam onto the detection area, enabling an easy and efficient optical coupling. For example, APS20D1 consists of such a 28G APD chip that is flip-chip soldered onto a ceramic carrier having either a coplanar GSG or a Y-shaped contact pad layout. The large pads allow placement of multiple bonds for optimized RF performance.