InGaAs/InP high speed photodiode chip with a G-S-G pad configuration.
The top illuminated p-i-n photodiode structure is optimized for single- or multi-mode fiber based data- and telecom 10 Gb/s applications and offers an excellent responsivity and high speed of response in the wavelength region from 1260 to 1620 nm. Over this entire wavelength range, a broadband AR coating provides low reflectivity and high return loss. The photodiode has a low capacitance and achieves full speed at low bias voltages.
- Optimized for single- or multi-mode fiber based applications
- High responsivity: 0.9 A/W
- Low capacitance: 180 fF
- Low dark current: 3 nA
- G-S-G pad configuration