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10 Gb/s Photodiode


InGaAs/InP high speed photodiode chip with a G-S-G pad configuration.
The top illuminated p-i-n photodiode structure is optimized for single- or multi-mode fiber based data- and telecom 10 Gb/s applications and offers an excellent responsivity and high speed of response in the wavelength region from 1260 to 1620 nm. Over this entire wavelength range, a broadband AR coating provides low reflectivity and high return loss. The photodiode has a low capacitance and achieves full speed at low bias voltages.


  • Optimized for single- or multi-mode fiber based applications
  • High responsivity: 0.9 A/W
  • Low capacitance: 180 fF
  • Low dark current: 3 nA
  • G-S-G pad configuration

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