PD10F1
10 Gb/s Photodiode
InGaAs/InP high speed photodiode chip with a dual-pad layout.
The top illuminated photodiode is optimized for single-mode data- and telecom applications up to 12 Gb/s and offers an excellent responsivity and a high speed of response in the wavelength region from 1260 to 1620 nm. Over this entire wavelength range, an AR coating provides low reflectivity and high return loss. The photodiode is optimized to provide the best trade-off between a large active area and low capacitance and achieves full speed at low bias voltages.
Features
- Top illuminated 10 Gb/s InGaAs photodiode
- Large optical aperture
- High responsivity: 0.9 A/W
- Low capacitance: 220 fF
- Low dark current: 2 nA
Popular Search Terms
multi-mode 56 Gbd Ultrafast InGaAs PD 10 Gb/s APD Chip on Carrier PM Module 28 Gbd DC 2.5 Gb/s Monitor PD Top PX Packaged PD 20 GHz 30 GHz 32 Gb/s 1310 single-mode 14 Gb/s 40 GHz 1 Gb/s 5 Gb/s Side 25 Gb/s Array High Power PD Bottom Position Sensing Lens 1.5 GHz 2D Array 850 10 GHz 1550 28/56 Gbd 112 Gbd Single 12 Gb/s 128 Gbd
Need More Information?