PD10G1
10 Gb/s Short- / Long-Wavelength Photodiode
InGaAs/InP photodiode chip with a G-S-G pad configuration offering excellent responsivity at wavelengths of 850 nm and 1310 nm.
The large optical aperture allows easy alignment to single- and multimode fibers. The top illuminated p-i-n photodiode is optimized for short-reach 850 nm and 1310 nm based high-speed data links up to 12 Gb/s. The device has a low capacitance and achieves full speed at low bias voltages.
Features
- Top illuminated 10 Gb/s InGaAs photodiode
- Large optical aperture
- High responsivity: 0.9 A/W @ 1310 nm
- Low capacitance: 260 fF
- Low dark current: 3 nA
- Wavelength specific AR coatings
Popular Search Terms
Top 10 GHz 2.5 Gb/s Monitor PD Chip on Carrier 850 Array 28 Gbd 25 Gb/s 20 GHz PX Packaged PD 112 Gbd 1550 single-mode 10 Gb/s 2D Array 5 Gb/s 28/56 Gbd APD 1 Gb/s PM Module Lens 56 Gbd Bottom High Power PD Single multi-mode 12 Gb/s 128 Gbd Position Sensing 32 Gb/s 14 Gb/s 1310 30 GHz Ultrafast InGaAs PD Side 40 GHz DC 1.5 GHz
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