PD10Y1
14 Gb/s GaAs Photodiode
PD10Y1 is a ultra small 14 Gb/s GaAs photodiode chip featuring a large optical aperture allowing easy coupling to multi-mode fibers. The top illuminated p-i-n photodiode structure is optimized for short reach 850 nm VCSEL based high-speed parallel optical interconnects up to 14 Gb/s and offers an excellent responsivity and high speed of response in the wavelength region from 830 to 860 nm.
The G-S-G contact pad layout allows easy and direct bonding to any TIA layout. In addition, the ultra small chip footprint saves valuable space in small packages such as TO-46.
Features
- Large optical aperture: 60 µm
- High responsivity: 0.6 A/W @ 850 nm
- Low capacitance: 210 fF
- Low dark current: 0.1 nA
- G-S-G pad configuration
- Cost effective, ultra small chip size
Popular Search Terms
Position Sensing 10 Gb/s 2.5 Gb/s High Quantum Efficiency 20 GHz single-mode Single APD 30 GHz 25 Gb/s Chip on Carrier 1 Gb/s 56 Gbd 850 PM Module 2D Array Bottom Array Side DC Top 28 Gbd 1310 PX Packaged PD 12 Gb/s 10 GHz Monitor PD 128 Gbd 5 Gb/s 14 Gb/s 28/56 Gbd High Power PD multi-mode Lens Ultrafast InGaAs PD 40 GHz DC 1.5 GHz 1550 112 Gbd
Need More Information?