InGaAs PD

At Albis, we offer a large catalogue of InGaAs photodiodes for various applications from few Gb/s up to extremly high data rate of 100 Gb/s. All photodiodes offer an excellent trade-off between fast speed of response combined with a large active diameter and high responsivity in the wavelength region from 1260 to 1620 nm. For applications where optical alignment is particulary challenging, we offer bottom illuminated photodiodes with a backside integrated lens which strongly improves optical coupling tolerances. All our products feature optimized anti-reflection coatings for specific wavelengths or broadband applications. The pad metallization can be either optimized for wire-bonding or flip-chip mounting. The arrays feature a channel pitch with photolithographic precision which strongly simplifies optical alignment with fiber ribbons or photonic integrated circuits.

Our photodiodes can be customized. Whether you prefer top-illumination or bottom-illumination, wire-bonding or flip-chip soldering, array or single channel devices, our team is ready to tackle your requirements. Like to know more about customization, click here.

10G InGaAs p-i-n photodiode chips

Low Speed InGaAs p-i-n photodiode chips

Multiple channel InGaAs p-i-n photodiode chips