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Top Illuminated Large Area Monitor Photodiode

Top illuminated InGaAs/InP monitor photodiode chip featuring a large optical aperture with a diameter of 300 µm. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs.
This monitor photodiode offers an excellent responsivity in the wavelength region from 980 nm to 1620 nm.


  • Large topside 300 µm optical aperture
  • Wide wavelength range from 980 nm to 1620 nm
  • High responsivity: 0.95 A/W
  • Low dark current: <1 nA
  • Also available on ceramic wrap-around carrier