PD00L1
Top Illuminated Large Area Monitor Photodiode
Top illuminated InGaAs/InP monitor photodiode chip featuring a large optical aperture with a diameter of 300 µm. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs.
This monitor photodiode offers an excellent responsivity in the wavelength region from 980 nm to 1620 nm.
Features
- Large topside 300 µm optical aperture
- Wide wavelength range from 980 nm to 1620 nm
- High responsivity: 0.95 A/W
- Low dark current: <1 nA
- Also available on ceramic wrap-around carrier
Popular Search Terms
Ultrafast InGaAs PD PX Packaged PD 1310 2D Array 32 Gb/s multi-mode 112 Gbd 40 GHz 10 GHz 1550 128 Gbd Lens single-mode Monitor PD 28/56 Gbd Bottom 25 Gb/s Side 30 GHz Single 1.5 GHz 1 Gb/s PM Module 2.5 Gb/s 5 Gb/s 20 GHz 56 Gbd DC Chip on Carrier APD Position Sensing 28 Gbd 10 Gb/s Top 14 Gb/s Array 850 High Power PD 12 Gb/s
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