PD00L1
Top Illuminated Large Area Monitor Photodiode

Top illuminated InGaAs/InP monitor photodiode chip featuring a large optical aperture with a diameter of 300 µm. The p-i-n photodiode structure is optimized for monitoring the optical output power of a wide variety of semiconductor lasers such as edge emitters and VCSELs.
This monitor photodiode offers an excellent responsivity in the wavelength region from 980 nm to 1620 nm.

Features

• Large topside 300 µm optical aperture
• Wide wavelength range from 980 nm to 1620 nm
• High responsivity: 0.95 A/W
• Low dark current: <1 nA
• Also available on ceramic wrap-around carrier