obtained his MSc. in Electrical Engineering at Eindhoven University of Technology, the Netherlands. After working at Swisscom, Berne on the characterization of DWDM systems, he joined Acterna, Germany (now part of JDSU) in 1998 where he was responsible for product marketing and business development in various regions such as North- and Latin America, Eastern Europe and Asia-Pacific. In 2003 he joined Albis Optoelectronics, in charge of global sales and marketing of the photodiode portfolio. After the acquisition of Albis Optoelectronics by Enablence, he moved to the position of General Manager of Enablence Switzerland AG. Following a successful Management Buyout at the end of 2012, Albis Optoelectronics resurfaces as the renowned industry brand for high performance photodetector products with Vincent serving as the company’s CEO.
Dr. Markus Blaser
received his MSc. in Electrical Engineering and the PhD from the Swiss Federal Institute of Technology (ETH) in Zurich, Switzerland. After joining the Institute of Quantum Electronics (IQE) of ETH, he mainly worked on epitaxial growth, material characterisation, device technology and optoelectronic integration of InP and related compounds. He has authored and co-authored more than 15 international publications. Dr. Blaser was co-founder of Opto Speed in 1995 where he took over the responsibility for establishing a competitive, high speed photodiode product line for single- and multichannel applications. In 2003, he founded Albis Optoelectronics with the purpose to continue to provide the Opto Speed photodiode portfolio to the global market. He currently acts as COO of Albis Optoelectronics.
Dr. Mayra Irion
Marketing and Sales Manager
received her MSc. in Applied Physics from the University of Bonn in 2003 after studies at the universities of Bonn, Germany and Uppsala, Sweden. She then joined the Organic Nanoelectronics Group at the University of Cologne as a research assistant with her research focusing on imaging sensors based on surface plasmon resonance. Right after receiving the PhD in 2009 she started working at Enablence Switzerland as a member in the product development team. Now, at Albis Optoelectronics she acts as Marketing and Sales Manager. She also manages Albis’ participation in EU research projects.
Dr. Hektor Meier
Head of Product Development
obtained his MSc. ETH in Nano- and Optoelectronics from the Swiss Federal Institute of Technology (ETH) in 2006. In the same year he joined the Computational Optoelectronics Group of the Integrated System Laboratory at ETH Zurich as research assistant. His research focused on the numerical simulation of non-equilibrium carrier transport. In 2011 he received his PhD and shortly after became a member of the product development team of Enablence Switzerland, responsible for the development of high and ultra high speed InGaAs PIN and avalanche photodiodes. He currently acts as Head of Product Development of Albis Optoelectronics in charge of the continued development and expansion of the photodiode portfolio.
Dr. Christophe Petit
obtained his MSc. in Material Sciences from the National Institute of Applied Science in Rennes (INSA), France, and a PhD from Denis-Diderot University in Paris, France, after his work on the electro-optical thermal transition of thin film oxides at the Laboratory of Optical Solids. He has worked at CILAS, France, on infrared gas lasers and at the Fraunhofer Institute for Applied Optics, Germany, on light scattering of Deep UV optics. He joined Opto Speed in 2001 as R&D engineer and when Albis Optoelectronics has been launched In 2003 he was already part of the photodiode development team. He is nowadays in charge of the GaAs and ultra-high speed InGaAs PIN photodiodes and is working on the development of next generation products.
Dr. Vladimir Djara
completed his MSc. in Physics with Photonics at the University of St Andrews, Scotland, and his MEng. in Plasma Processes at the University of Orléans, France. He worked for 9 years as a FEOL Process Engineer at the Tyndall National Institute, Ireland, where he was primarily responsible for the development and optimization of III-V and Si dry etch processes. In 2013, he obtained his PhD from the University College Cork, Ireland, for the design, fabrication, and characterization of high-k/InGaAs MOSFETs. After his PhD, he joined IBM Research GmbH, Switzerland, to work on the integration of a hybrid InGaAs/SiGe platform for advanced CMOS technology nodes. He has more than 50 scientific publications and 9 filed patent applications. Since 2016 he is with Albis Optoelectronics, where he currently manages a broad portfolio of InGaAs monitor and PIN photodiode products.
Dr. Valeria Liverini
obtained her MSc. in Electrical Engineering from the University of California in San Diego, USA in 2002. She then joined the group of Ultrafast Laser Physics at the Swiss Federal Institute of Technology (ETH) as a research assistant. After receiving her PhD in 2007 she worked as a senior research assistant in the Quantum Optoelectronics Group focusing her research on the development of GaAs and InP-based quantum cascade lasers and quantum dot infrared photodetectors. Since 2014 she is a member of the Albis product development team and is responsible for the development of custom design chip on submount and packaged photodiode solutions.
RF Application Engineer
received her MSc. in Electrical Engineering from the University of Applied Sciences Northwestern Switzerland (FHNW). From 2014 to 2016 she worked as a research assistant at the Institute of Microelectronics, FHNW in Brugg, in the Communications and RF technology group with her research focusing on ultra-stable pin attenuators and on RF simulation of broadband limiters. In 2016 she joined Albis Optoelectronics as an RF Application Engineer and is responsible for the development of high speed, packaged RF photodiodes.
Dr. Maria Hämmerli
obtained her MSc in Quantum Electronics (Applied Physics and Mathematics) from Moscow Institute of Physics and Technology (MIPT). She completed her PhD studies in the Millimeter-Wave electronics Group at the Department of Information Technology and Electrical Engineering at ETH Zurich. There, she developed and fabricated high-speed GaAsSb-based double heterojunction bipolar transistors (DHBTs). After working for ABB Semiconductors in Lenzburg, focussing on the development of a new generation of integrated gate-commutated thyristors (IGCTs), she joined the product development team of Albis Optoelectronics in 2019. She currently manages the InP avalanche photodiodes and a broad portfolio of GaAs photodiode products.