PD40X1
56 Gbaud Photodiode with Integrated Lens
Ultra high speed InGaAs/InP photodiode chip with an integrated backside lens. The bottom illuminated p-i-n photodiode structure is optimized for 56 Gbd PAM-4 (400GBASE-DR4 and 400G-FR4) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications. It offers an excellent responsivity and high speed of response in the wavelength region from 1260 to 1620 nm.
The integrated backside lens focuses the incoming light beam on the topside detecting area. This increases the backside detecting diameter and allows easy and efficient optical coupling.
Features
- Ultra high speed
- Easy optical coupling through integrated backside lens
- Large lens diameter of 100 µm
- High responsivity of 0.8 A/W
- Low capacitance: 40 fF
- G-S-G pad configuration with support pads for flip-chip soldering
Popular Search Terms
PX Packaged PD 1550 5 Gb/s Ultrafast InGaAs PD Single 10 Gb/s Array DC 2D Array High Power PD High Quantum Efficiency Chip on Carrier Monitoring and Sensing PD 12 Gb/s 1 Gb/s DC 56 Gbd 1.5 GHz 28/56 Gbd 20 GHz Side PM Module 112 Gbd 850 128 Gbd LC receptacle 40 GHz Position Sensing 30 GHz APD multi-mode 28 Gbd 2.5 Gb/s 10 GHz 1310 Top 25 Gb/s Bottom Lens single-mode 14 Gb/s APD ROSA
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