PD40C1
56 Gbaud Photodiode with Enhanced Responsivity
Ultra high speed InGaAs/InP photodiode chip optimized for 56 Gbaud PAM-4 (400GBASE-DR4 and 400G-FR4), single-mode telecom and microwave photonic links, RF over fiber as well as test and measurement applications. It offers an excellent responsivity and high speed of response in the wavelength region around 1310 nm. Over the entire wavelength range from 1260 to 1620 nm, a broadband AR coating provides low reflectivity and high return loss.
Features
- Ultra high speed
- Typical bandwidth: 38 GHz
- Typical responsivity: 0.8 A/W @ 1310nm
- G-S-G pad configuration with large pad diameter of 80 µm
- Cost effective, small chip size
Popular Search Terms
20 GHz PX Packaged PD 1.5 GHz 14 Gb/s Top 128 Gbd 10 Gb/s 1550 850 Single Lens High Power PD APD ROSA APD 1310 PM Module Side High Quantum Efficiency 12 Gb/s single-mode LC receptacle DC 56 Gbd 40 GHz 2D Array 10 GHz 5 Gb/s 28 Gbd Bottom 112 Gbd 30 GHz Chip on Carrier 1 Gb/s 28/56 Gbd Ultrafast InGaAs PD multi-mode Array 2.5 Gb/s 25 Gb/s Position Sensing DC Monitoring and Sensing PD
Need More Information?