Ultra high speed InGaAs/InP photodiode chip optimized for 56 Gbaud PAM-4 (400GBASE-DR4 and 400G-FR4), single-mode telecom and microwave photonic links, RF over fiber as well as test and measurement applications. It offers an excellent responsivity and high speed of response in the wavelength region around 1310 nm. Over the entire wavelength range from 1260 to 1620 nm, a broadband AR coating provides low reflectivity and high return loss.
- Ultra high speed
- Typical bandwidth: 38 GHz
- Typical responsivity: 0.8 A/W @ 1310nm
- G-S-G pad configuration with large pad diameter of 80 µm
- Cost effective, small chip size