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Twin 32 Gb/s Balanced Photodiodes

Twin array of balanced, ultra high-speed InGaAs/InP photodiodes with separate anode and cathode pads in a Ground-Signal-Signal-Ground arrangement. Each channel is optimized for data rates of 28 Gb/s and above. The 250 μm pitch between individual photodiodes results in a very compact chip design.


  • Separate anode and cathode pads in a G-S-S-G arrangement
  • Large cathode pads with room for two wire bonds
  • High responsivity: 0.8 A/W
  • Low bias voltage: 2 V

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