InGaAs/InP very high speed photodiode chip featuring a large optical aperture enabling easy coupling to single-mode fibers.
The top illuminated p-i-n photodiode structure is optimized for long-wavelength, single mode telecom and microwave photonic links, RF over fiber as well as test and measurement applications. It offers an excellent responsivity and high speed of response in the wavelength region from 1260 to 1620 nm. Over the entire wavelength range, a broadband AR coating provides low reflectivity and high return loss. The photodiode has a low capacitance and achieves full speed at low bias voltages.
- Optimized for long-wavelength single-mode telecom applications
- Easy coupling into large topside optical aperture
- G-S-G pad configuration with large pad diameter of 80 µm
- High responsivity: 0.8 A/W
- Low capacitance: <100 fF