APD05C1
Linear Mode APD for Long-Wavelength LiDAR
Bottom illuminated, highly sensitive APD optimized for long wavelength, eye safe LiDAR applications. Thanks to the low device capacitance, the APD can be operated in pulsed time-of-flight (TOF) systems as well as offers the required bandwidth and linearity to pursue formats such as frequency modulated continuous wave (FMCW).
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10 Gb/s APD with Integrated Lens
Bottom-illuminated, high speed APD with an integrated backside lens. The APD is optimized for single-mode Gigabit Passive Optical Networks (GPON) and 10 Gb/s SONET/SDH telecom applications.
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20 GHz High Power Photodiode Module
High power, high linearity microwave photodiode module designed for direct optical-to-electrical conversion of RF-modulated optical signals up to 20 GHz.
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28 Gb/s Avalanche Photodiode with Integrated Lens
APD20D1 is a bottom-illuminated, 28 Gb/s avalanche photodiode (APD) chip with integrated backside lens. This innovative APD provides low noise multiplication and a high gain-bandwidth product which enables the design of high sensitivity 28G receivers. Typical applications include 28 Gbaud PAM-4, 100GBASE-ER4 and 25G EPON. The integrated backside lens focuses the incoming light […]
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30 GHz Photodetector
High speed microwave photodiode module designed for direct optical-to-electrical conversion of RF-modulated optical signals and provides a typical bandwidth of 30 GHz.
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56 Gbaud Photodiode with Integrated Lens
Ultra high speed InGaAs/InP photodiode chip with an integrated backside lens. The bottom illuminated p-i-n photodiode structure is optimized for 56 Gbd PAM-4 (400GBASE-DR4 and 400G-FR4) single-mode telecom, microwave photonic links, RF over fiber as well as test and measurement applications. It offers an excellent responsivity and high speed of response in the wavelength […]
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20 GHz High Power Photodiode on Carrier
High power, high linearity photodiode chip mounted on an AlN carrier. It offers a typical bandwidth of 22 GHz for photocurrents up to 50 mA, a responsivity of 0.5 A/W and high linearity of +30 dBm OIP3 @ 20 GHz, 30 mA.
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56 Gbaud Photodiode with Enhanced Responsivity
Top illuminated photodiode chip with enhanced responsivity for single-mode data and telecom applications up to 56 Gbaud.
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56 Gbaud Photodiode with Enhanced Responsivity
Top illuminated photodiode chip with enhanced responsivity for single-mode data and telecom applications up to 56 Gbaud.
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Top Illuminated Monitor Photodiode
Top illuminated InGaAs/InP monitor photodiode chip featuring a large optical aperture with a diameter of 150 µm.
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Multi-Channel Top Illuminated Monitor Photodiode Array
Top illuminated multi-channel 2.5 Gb/s photodiode array with large optical apertures of 150 µm. The photodiode pitch of 250 µm is suitable for coupling to fiber ribbon cables. The basic photodiode cell can be repeated n times to provide scalable arrays of multiple individual photodiode channels. The p-i-n photodiode structure is optimized for monitoring the […]
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28 Gbd APD with Integrated Lens
Ultra high speed avalanche photodiode (APD) chip with an integrated backside lens.
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56 Gbaud Photodiode with Integrated Lens
PS40X1 is an assembly of a single 56 Gbaud photodiode chip flip-chip soldered onto a metallized ceramic carrier with coplanar contact layout. The bottom illuminated InGaAs p-i-n photodiode structure with an integrated backside lens is optimized for 56 Gbd PAM-4 (400GBASE-DR4 and 400G-FR4) single-mode telecom, microwave photonic links, RF over fiber as well as test […]
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8 Channel Flip-chip Soldered Balanced Photodiode Array
Monolithic array of eight InGaAs/InP bottom illuminated photodiodes with large optical apertures of 120 µm separated by a 300 μm pitch. The bottom illuminated p-i-n photodiode structures are optimized for low speed monitoring applications in data- and telecom up to 2.5 Gb/s. They offer an excellent responsivity and high speed of response in the wavelength […]
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25 Gb/s APD with Integrated Lens
Ultra high speed avalanche photodiode (APD) chip with an integrated backside lens.
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