Tap To Call

  Call Us: +41 44 552 53 00

Moosstrasse 2a
8803 Rueschlikon, Switzerland

At Albis, we offer a large catalogue of InGaAs photodiodes for various applications from few Gb/s up to extremly high data rate of 100 Gb/s. All photodiodes offer an excellent trade-off between fast speed of response combined with a large active diameter and high responsivity in the wavelength region from 1260 to 1620 nm. For applications where optical alignment is particulary challenging, we offer bottom illuminated photodiodes with a backside integrated lens which strongly improves optical coupling tolerances. All our products feature optimized anti-reflection coatings for specific wavelengths or broadband applications. The pad metallization can be either optimized for wire-bonding or flip-chip mounting. The arrays feature a channel pitch with photolithographic precision which strongly simplifies optical alignment with fiber ribbons or photonic integrated circuits.

Our photodiodes can be customized. Whether you prefer top-illumination or bottom-illumination, wire-bonding or flip-chip soldering, array or single channel devices, our team is ready to tackle your requirements. Like to know more about customization, click here.

Single channel Ultrafast InGaAs p-i-n photodiode chips

ProductSpeedIlluminationDetails
PD40C156 GbaudTopRead More
PD40D156 GbaudTopRead More
PD40E156 GbaudBottomRead More
PD40X156 GbaudLensRead More
PD40G128 / 56 GbaudTopRead More
PD40H128 / 56 GbaudTopRead More
PD40Y128 / 56 GbaudLensRead More
PD20D128 GbaudTopRead More
PD20X128 GbaudLensRead More

Multiple channel Ultrafast InGaAs p-i-n photodiode chips

ProductSpeedChannelsIlluminationDetails
PD20E232 Gb/s2TopRead More
PD20G228 Gb/s2LensRead More
PD20W428 Gb/s4TopRead More
PD20Vx28 Gb/sn x 4TopRead More
PD20DA28 Gb/s12TopRead More