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Moosstrasse 2a
8803 Rueschlikon, Switzerland

At Albis, we offer a large catalogue of InGaAs photodiodes for various applications from few Gb/s up to extremly high data rate of 40 Gb/s. All photodiodes offer an excellent trade-off between fast speed of response combined with a large active diameter and high responsivity in the wavelength region from 1260 to 1620 nm. For applications where optical alignement is particulary challenging, we offer bottom illuminated photodiodes with a backside integrated lens which strongly improve optical coupling tolerances. All our products feature optimized anti-reflection coatings for specific wavelengths or broadband application. The pad metallization can be either optimized for wire or flip-chip bonding. The arrays feature a channel pitch with photolithographic precision which strongly simplifies optical alignement with fiber ribbon or photonic integrated circuits.

Our photodiodes can be customized. Whether you prefer top-illumination or bottom-illumination, wire-bonding or flip-chip soldering, array or single channel devices, our team is ready to tackle your requirements. Like to know more about customization, click here.

Single channel InGaAs p-i-n photodiode chips

PD40D156 GbaudTopRead More
PD40E156 GbaudBottomRead More
PD40G128 / 56 GbaudTopRead More
PD40X156 GbaudLensRead More
PD20D128 Gb/sTopRead More
PD20X128 Gb/sLensRead More
PD10A114 Gb/sTopRead More
PD10B110 Gb/sTopRead More
PD10E110 Gb/sTopRead More
PD10F110 Gb/sTopRead More
PD10G110 Gb/sTopRead More
PD10W110 Gb/sTopRead More
PD10X110 Gb/sLensRead More
PD05B15 Gb/sTopRead More
PD05P15 Gb/sBottomRead More

Multiple channel InGaAs p-i-n photodiode chips

PD20E232 Gb/s2TopRead More
PD20DA28 Gb/s12TopRead More
PD20G228 Gb/s2LensRead More
PD20Vx28 Gb/sn x 4TopRead More
PD20W428 Gb/s4TopRead More
PD10MA12 Gb/s12TopRead More
PD10Vx12 Gb/sn x 4TopRead More
PD10I410 Gb/s4TopRead More
PD05EA5 Gb/s12TopRead More
PD05HA5 Gb/s12TopRead More
PD05J42.5 Gb/sn x 4BottomRead More